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hal-00463965v1  Conference papers
Pierre-Eugène CoulonB.S. SahuMarzia CarradaSylvie Schamm-ChardonGérard Benassayag et al.  Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications
39th IEEE European Solid-State Device Research Conference (ESSDERC 2009), Sep 2009, ATHENES, Greece
hal-00432148v1  Journal articles
Larysa KhomenkovaChristian DufourPierre-Eugène CoulonCaroline BonafosF. Gourbilleau. Stable HfO2-based Layers Fabricated by RF Magnetron Sputtering
ECS Transactions, Electrochemical Society, Inc., 2009, 25 (6), pp.153-162
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hal-01745024v1  Journal articles
L. LamagnaC. WiemerM. PeregoS. N. VolkosS. Baldovino et al.  O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates
Journal of Applied Physics, American Institute of Physics, 2010, 108 (8), pp.084108. ⟨10.1063/1.3499258⟩
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hal-01745031v1  Journal articles
D. TsoutsouL. LamagnaS. N. VolkosA. MolleS. Baldovino et al.  Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks
Applied Physics Letters, American Institute of Physics, 2009, 94 (5), pp.53504 - 53504. ⟨10.1063/1.3075609⟩