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hal-01717337v1  Journal articles
Isabel González Vallejo, Geoffrey Gallé, Brice Arnaud, Shelley Scott, Max Lagally et al.  Observation of large multiple scattering effects in ultrafast electron diffraction on monocrystalline silicon
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2018, 97 (5), ⟨10.1103/PhysRevB.97.054302⟩
hal-00432148v1  Journal articles
Larysa Khomenkova, Christian Dufour, Pierre-Eugène Coulon, Caroline Bonafos, F. Gourbilleau. Stable HfO2-based Layers Fabricated by RF Magnetron Sputtering
ECS Transactions, Electrochemical Society, Inc., 2009, 25 (6), pp.153-162
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hal-01820398v1  Journal articles
L. Khomenkova, C. Dufour, Pierre-Eugène Coulon, Caroline Bonafos, F. Gourbilleau. High-k Hf-based layers grown by RF magnetron sputtering
Nanotechnology, Institute of Physics, 2010, 21 (9), ⟨10.1088/0957-4484/21/9/095704⟩
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hal-03088683v1  Journal articles
Isabel Gonzalez Vallejo, Geoffrey Gallé, Brice Arnaud, Shelley Scott, Max Lagally et al.  Observation of large multiple scattering effects in ultrafast electron diffraction on monocrystalline silicon
Physical Review B, American Physical Society, 2018, 97 (5), pp.54302. ⟨10.1103/PhysRevB.97.054302⟩
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hal-02551064v1  Journal articles
Morgane Dolhen, Allix Mathieu, Vincent Sarou-Kanian, Franck Fayon, Cécile Genevois et al.  A comprehensive study of the glass/translucent anti-glass/transparent ceramic structural ordering in the Bi2O3Nb2O5–TeO2 system
Acta Materialia, Elsevier, 2020, 189, pp.73-84. ⟨10.1016/j.actamat.2020.02.062⟩
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hal-01745023v1  Journal articles
Lionel Calmels, Pierre-Eugène Coulon, Sylvie Schamm-Chardon. Calculated and experimental electron energy-loss spectra of La2O3, La(OH)(3), and LaOF nanophases in high permittivity lanthanum-based oxide layers
Applied Physics Letters, American Institute of Physics, 2011, 98 (24), pp.243116. ⟨10.1063/1.3600783⟩
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hal-01745031v1  Journal articles
D. Tsoutsou, L. Lamagna, S. N. Volkos, A. Molle, S. Baldovino et al.  Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks
Applied Physics Letters, American Institute of Physics, 2009, 94 (5), pp.53504 - 53504. ⟨10.1063/1.3075609⟩
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hal-01745026v1  Journal articles
L. Lamagna, C. Wiemer, S. Baldovino, A. Molle, M. Perego et al.  Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)
Applied Physics Letters, American Institute of Physics, 2009, 95 (12), pp.122902. ⟨10.1063/1.3227669⟩
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hal-01745025v1  Journal articles
C. Wiemer, L. Lamagna, S. Baldovino, M. Perego, Sylvie Schamm-Chardon et al.  Dielectric properties of Er-doped HfO2 (Er ~ 15%) grown by atomic layer deposition for high-kappa gate stacks
Applied Physics Letters, American Institute of Physics, 2010, 96 (18), pp.182901. ⟨10.1063/1.3400213⟩
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hal-01745024v1  Journal articles
L. Lamagna, C. Wiemer, M. Perego, S. N. Volkos, S. Baldovino et al.  O-3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates
Journal of Applied Physics, American Institute of Physics, 2010, 108 (8), pp.084108. ⟨10.1063/1.3499258⟩
hal-00463965v1  Conference papers
Pierre-Eugène Coulon, B.S. Sahu, Marzia Carrada, Sylvie Schamm-Chardon, Gérard Benassayag et al.  Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications
39th IEEE European Solid-State Device Research Conference (ESSDERC 2009), Sep 2009, ATHENES, Greece

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