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hal-01736070v1  Journal articles
Xavier HebrasP. NguyenK.K. BourdelleF. LetertreNikolay Cherkashin et al.  Comparison of platelet formation in hydrogen and helium-implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2007, 262 (1), pp.24-28. ⟨10.1016/j.nimb.2007.04.158⟩
hal-01736101v1  Journal articles
Fuccio CristianoNikolay CherkashinXavier HebrasP. CalvoY. Lamrani et al.  Ion beam induced defects in crystalline silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
hal-01736096v1  Journal articles
Fuccio CristianoNikolay CherkashinP. CalvoY. LamraniXavier Hebras et al.  Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
hal-01736106v1  Conference papers
S. PaulW. LerchXavier HebrasNikolay CherkashinFuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
hal-01736121v1  Journal articles
B. BayhaS. PaulW. LerchD.F. DowneyE.A. Arevalo et al.  Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime
Proceedings of the International Conference on Ion Implantation Technology, 2002, 22-27-September-2002, pp.618-621. ⟨10.1109/IIT.2002.1258081⟩
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hal-01736115v1  Journal articles
Fuccio CristianoXavier HebrasNikolay CherkashinAlain ClaverieW. Lerch et al.  Clusters formation in ultralow-energy high-dose boron-implanted silicon
Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩