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hal-01497144v1  Conference papers
Ida LucciSimon CharbonnierYanping WangM. BahriMaxime Vallet et al.  3D GaP/Si(001) growth mode and antiphase boundaries
19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
hal-01497145v1  Conference papers
Pierre GuilleméJulie Le PouliquenTony RohelMaxime ValletJulien Stodolna et al.  Impact of crystal antiphase boundaries on second harmonic generation in GaP microdisks
European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
hal-01497149v1  Conference papers
Ida LucciSimon CharbonnierYanping WangMounib BahriMaxime Vallet et al.  Etude de la croissance cohérente de GaP/Si(001) en couche mince
Réunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
hal-01497220v1  Conference papers
Yanping WangAntoine LétoublonThanh Tra NguyenG. PatriarcheAnne Ponchet et al.  Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonics
European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
hal-01496922v1  Poster communications
Mickael da SilvaC. CornetAntoine LétoublonChristophe LevalloisAlain Rolland et al.  GaAsPN Single and Tandem Solar Cells on Silicon
19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
hal-01497064v1  Poster communications
Ida LucciSimon CharbonnierYanping WangMounib BahriMaxime Vallet et al.  Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on Si
European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
hal-01708282v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletTony RohelRozenn Bernard et al.  III-V/Si 3D crystal growth: a thermodynamic description
Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
hal-01708047v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletPascal TurbanYoan Léger et al.  (114) GaP surface texturation on Si for water splitting
EMRS Spring meeting 2018, Jun 2018, Strasbourg, France
hal-01115278v1  Conference papers
Yanping WangJulien StodolnaThanh Tra NguyenAntoine LétoublonJithesh Kuyyalil et al.  Abrupt heterointerface and low defect density in GaP/Si nanolayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France
hal-01114912v1  Conference papers
Olivier DurandYanping WangSamy AlmosniMounib BahriJulien Stodolna et al.  Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon
6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
hal-00486707v1  Conference papers
Georges EliasAntoine LétoublonPhilippe CaroffIbrahim AlghoraibiNicolas Bertru et al.  Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm
LWQD, International SANDIE Workshop on Long Wave Length Quantum Dots : Growth and Application, Jul 2007, Rennes, France. pp.G. Elias
hal-00654330v1  Conference papers
Weiming GuoThanh Tra NguyenAntoine LétoublonGeorges EliasC. Cornet et al.  Structural characterisation of GaP/Si nanolayers
European Materials Research Society 2011, May 2011, Strasbourg, France
hal-01910543v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
hal-01910554v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
hal-00654292v1  Conference papers
Weiming GuoThanh Tra NguyenGeorges EliasAntoine LétoublonC. Cornet et al.  Structural charaterisation of GaP/Si nanolayers
Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1-4
hal-00654285v1  Conference papers
C. CornetCédric RobertThanh Tra NguyenWeiming GuoAlexandre Bondi et al.  Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
hal-00489868v1  Journal articles
Wei LuTony RohelNicolas BertruHervé FolliotCyril Paranthoen et al.  Achievement of InSb Quantum Dots on InP(100) Substrates
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. ⟨10.1143/JJAP.49.060210⟩
hal-00788526v1  Conference papers
Thanh Tra NguyenCédric RobertC. CornetWeiming GuoAntoine Létoublon et al.  coherent integration of photonics on silicon through the growth of GaP/Si
Technical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
hal-00788308v1  Conference papers
Alexandre BondiC. CornetS. Boyer-RichardThanh Tra NguyenAntoine Létoublon et al.  Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy
European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩