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hal-01910554v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
hal-02048639v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe III-V epitaxy on Si
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
hal-01910535v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A general III-V/Si growth process description
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
hal-01910543v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
hal-00486707v1  Conference papers
Georges EliasAntoine LétoublonPhilippe CaroffIbrahim AlghoraibiNicolas Bertru et al.  Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm
LWQD, International SANDIE Workshop on Long Wave Length Quantum Dots : Growth and Application, Jul 2007, Rennes, France. pp.G. Elias
hal-00809031v1  Conference papers
Yu ZhaoNicolas BertruHervé FolliotMathieu PerrinS. Boyer-Richard et al.  Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayers
International Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
hal-00788308v1  Conference papers
Alexandre BondiC. CornetS. Boyer-RichardThanh Tra NguyenAntoine Létoublon et al.  Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy
European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
hal-01708282v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletTony RohelRozenn Bernard et al.  III-V/Si 3D crystal growth: a thermodynamic description
Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
hal-00489868v1  Journal articles
Wei LuTony RohelNicolas BertruHervé FolliotCyril Paranthoen et al.  Achievement of InSb Quantum Dots on InP(100) Substrates
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. ⟨10.1143/JJAP.49.060210⟩
hal-00654285v1  Conference papers
C. CornetCédric RobertThanh Tra NguyenWeiming GuoAlexandre Bondi et al.  Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
hal-00788544v1  Conference papers
Olivier DurandSamy AlmosniCédric RobertThanh Tra NguyenC. Cornet et al.  Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells
Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
hal-00788526v1  Conference papers
Thanh Tra NguyenCédric RobertC. CornetWeiming GuoAntoine Létoublon et al.  coherent integration of photonics on silicon through the growth of GaP/Si
Technical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
hal-00788396v1  Journal articles
Thanh Tra NguyenCédric RobertAntoine LétoublonC. CornetThomas Quinci et al.  Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers
Thin Solid Films, Elsevier, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III, 541, pp.36-40. ⟨10.1016/j.tsf.2012.11.116⟩
hal-00918735v1  Conference papers
Samy AlmosniC. CornetThomas QuinciThanh Tra NguyenJithesh Kuyyalil et al.  UHVCVD-MBE growth cluster for III-N-V/Si solar cells
Compound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan
hal-01497220v1  Conference papers
Yanping WangAntoine LétoublonThanh Tra NguyenG. PatriarcheAnne Ponchet et al.  Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonics
European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
hal-01497145v1  Conference papers
Pierre GuilleméJulie Le PouliquenTony RohelMaxime ValletJulien Stodolna et al.  Impact of crystal antiphase boundaries on second harmonic generation in GaP microdisks
European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
hal-01496924v1  Conference papers
Mickael da SilvaC. CornetAntoine LétoublonChristophe LevalloisAlain Rolland et al.  First stage results on III-V/Si tandem cells using GaAsPN dilute-nitride
European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
hal-00918738v1  Conference papers
Anne PonchetJulien StodolnaC. CornetAntoine LétoublonThanh Tra Nguyen et al.  Origin and observations of extended defects in III-V epilayers on Si
International Workshop "Silicon & Photonics", Jun 2013, Rennes, France
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hal-01833206v1  Journal articles
Ida LucciSimon CharbonnierLaurent PedesseauM. ValletLaurent Cerutti et al.  Universal description of III-V/Si epitaxial growth processes
Physical Review Materials, American Physical Society, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩