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hal-01922899v1  Journal articles
Federico PancieraP FazziniM. ColletJ. BoucherEléna Bedel-Pereira et al.  End-of-range defects in germanium and their role in boron deactivation
Applied Physics Letters, American Institute of Physics, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩
hal-01481844v1  Journal articles
A MunozyagueGeorges LandaRobert CarlesC FontaineEléna Bedel-Pereira. OPTICAL DETERMINATION OF STRAINS IN HETEROSTRUCTURES - GAAS/SI AS AN EXAMPLE
Journal of Applied Physics, American Institute of Physics, 1989, 66 (1), pp.196-200. ⟨10.1063/1.343904⟩
hal-01481850v1  Journal articles
C FontaineH BenarfaEléna Bedel-PereiraA MunozyagueGeorges Landa et al.  MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES
Journal of Applied Physics, American Institute of Physics, 1986, 60 (1), pp.208-212. ⟨10.1063/1.337683⟩
hal-01481851v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJb RenucciJm Roquais et al.  CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY
Journal of Applied Physics, American Institute of Physics, 1986, 60 (6), pp.1980-1984. ⟨10.1063/1.337199⟩
hal-01481852v1  Journal articles
Georges LandaRobert CarlesJb RenucciC FontaineEléna Bedel-Pereira et al.  RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2
Journal of Applied Physics, American Institute of Physics, 1986, 60 (3), pp.1025-1031. ⟨10.1063/1.337392⟩
hal-01481853v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJp RedoulesJb Renucci. RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS
Journal of Physics C: Solid State Physics, Institute of Physics (IOP), 1986, 19 (10), pp.1471-1479. ⟨10.1088/0022-3719/19/10/004⟩
hal-01921825v1  Journal articles
Giuseppe FisicaroLourdes PelazMaria AboyPedro LopezMarkus Italia et al.  Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
hal-00323461v1  Journal articles
N. BertruM. NouaouraJ. BonnetL. LassabatereEléna Bedel-Pereira et al.  Preparation of GaSb(100) surfaces by ultraviolet irradiation
Journal of Vacuum Science and Technology A, American Vacuum Society, 1997, 15 (4), pp.2043-2050. ⟨10.1116/1.580606⟩
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hal-00003590v1  Journal articles
Guillaume BachelierAdnen MlayahM. CazayousJesse GroenenAntoine Zwick et al.  Resonant Raman scattering in GaAsN: Mixing, localization and band impurity formation of electronic states
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2003, 67, pp.205325
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hal-01411427v1  Journal articles
V. MortetDavid TrémouillesJ. BulířP. HubíkL. Heller et al.  Peculiarities of high electric field conduction in p-type diamond
Applied Physics Letters, American Institute of Physics, 2016, 108 (15), pp.152106. ⟨10.1063/1.4946853⟩
hal-01677027v1  Conference papers
Vincent VentalonAliki TsopelaAdrian LabordeLudovic SalvagnacEléna Bedel-Pereira et al.  Détection optique de polluants dans l'eau : étude d'OLEDs et d'OPDs intégrées dans un bio-capteur
Science et Technologie des Systèmes pi-Conjugués ( SPIC 2015), Oct 2015, Angers, France
hal-01691911v1  Conference papers
Léa FarouilFabienne AlaryEléna Bedel-PereiraIsabelle SéguyJean-Louis Heully. Propriétés structurelles et photophysiques du 3- hexylthiophène (P3HT) : études expérimentale et théorique combinées
TouCAM 2017 2 ème édition des Journées Toulousaines du Calcul Atomique et Moléculaire, Nov 2017, Toulouse, France
hal-01691902v1  Conference papers
Léa FarouilFabienne AlaryEléna Bedel-PereiraIsabelle SéguyJean-Louis Heully. Propriétés structurelles et photophysiques du 3-hexylthiophène (P3HT) : études expérimentale et théorique combinées
Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM2017), Nov 2017, Strasbourg, France. pp.1 - 7
hal-01690886v1  Conference papers
Richard MonflierAmin BenyoucefMégane TurpinFuccio CristianoEléna Bedel-Pereira. Etude des défauts induits par recuit laser excimer sur silicium
20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p