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hal-01947255v1  Conference papers
Hélène CarrèreAndrea BalocchiXavier MarieAlexandre ArnoultChantal Fontaine. Spin properties of dilute bismide alloys
The Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom
hal-01556263v1  Conference papers
Sabry KhalfallahPascal DubreuilLaurent EscotteChantal FontaineA. Muñoz-Yagüe et al.  III-V Semiconductor Integrated (De)Modulators/Multiplexers for coherence multiplexed sensor networks
10th international conference on solid-state sensors and actuators, 1999, Sendaï, Japan
hal-01556269v1  Conference papers
Sabry KhalfallahPascal DubreuilLaurent EscotteRené LegrosChantal Fontaine et al.  Modulateur de cohérence intégré en GaAlAs sur GaAs au réseau de capteurs
7ème Journées Nationales de Microélectronique et Optoélectronique, Jan 1999, Egat, France
hal-01855298v1  Conference papers
Guilhem AlmuneauStéphane CalvezGael LafleurChantal FontaineAlexandre Arnoult et al.  Selective oxidation of AlGaAs for confinement in III-V photonic devices
16th NAMIS workshop ” Micro- and nanosystems, large area electronics and biofunctionalities towards novel integrated smart systems“, Jun 2018, Oulu, Finland. 36p
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hal-02281696v1  Journal articles
Clara CornilleAlexandre ArnoultQuentin GravelierChantal Fontaine. Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurements
Journal of Applied Physics, American Institute of Physics, 2019, Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (9), pp.093106. ⟨10.1063/1.5111932⟩
hal-02052796v1  Conference papers
Andrea BalocchiSawsen AzaiziaHélène CarrèreThierry AmandAlexandre Arnoult et al.  Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
hal-01557042v1  Conference papers
Sabry KhalfallahPascal DubreuilLaurent EscotteRené LegrosChantal Fontaine et al.  Modulateur de cohérence intégré en AlGaAs/GaAs
Journées Nationales de l’Optique Guidée, JNOG, Nov 1997, St Etienne, France. pp.196-198
hal-01557038v1  Conference papers
Bruno BêcheChantal FontaineJean-Pierre GoedgebuerHenri Porte. Forte biréfringence de forme dans guides monomodes de type ruban sur super-réseaux GaAs/AlAs
Journées Nationales de l’Optique Guidée, JNOG, 1997, St Etienne, France. pp.199-201
hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947425v1  Poster communications
Chantal FontaineAlexandre ArnoultFuccio CristianoHélène CarrèreSawsen Azaizia et al.  Growth and properties of GaAsBi thin layers by molecular beam epitaxy
International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
hal-01857568v1  Conference papers
Kevin LouarnAlexandre BounouhChantal FontaineFrançois OlivieGuillaume Libaude et al.  III-V based Heterojunction Tunnel for Multijunction Solar Cells
PULSE summer school : Epitaxy promises and updates, Porquerolles (France), Septembre 2015, Sep 2015, Porquerolles, France
hal-01610933v1  Conference papers
Kevin LouarnYann ClaveauAlexandre ArnoultChantal FontaineJonathan Colin et al.  Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïques
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France