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hal-02281696v1  Journal articles
Clara CornilleAlexandre ArnoultQuentin GravelierChantal Fontaine. Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurements
Journal of Applied Physics, American Institute of Physics, 2019, Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (9), pp.093106. ⟨10.1063/1.5111932⟩
hal-01947298v1  Conference papers
Simone MazzucatoH LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Electron g-factor in strained bulk GaAsBi epilayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France
hal-01947255v1  Conference papers
Hélène CarrèreAndrea BalocchiXavier MarieAlexandre ArnoultChantal Fontaine. Spin properties of dilute bismide alloys
The Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom
hal-01947354v1  Poster communications
Hajer MakhloufiPoonyasiri BoonpengSimone MazzucatoHélène CarrèreT.T. Zhang et al.  Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947318v1  Conference papers
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing
5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947425v1  Poster communications
Chantal FontaineAlexandre ArnoultFuccio CristianoHélène CarrèreSawsen Azaizia et al.  Growth and properties of GaAsBi thin layers by molecular beam epitaxy
International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016
hal-01947430v1  Conference papers
Sawsen AzaiziaAndrea BalocchiDelphine LagardeAlexandre ArnoultXavier Marie et al.  Carrier dynamics in GaAsBi quantum wells
11th IEEE Nanotechnology Materials and Devices Conference (NMDC), Dr. K. Makasheva; Dr. C. Bonafos, Oct 2016, Toulouse, France
hal-01947398v1  Poster communications
Alexandre ArnoultAurélien KuckHajer MakhloufiPoonyasiri BoonpengSimone Mazzucato et al.  Spin properties of dilute bismides
18th EuroMBE, Mar 2015, Canazei, Italy. 2015
hal-01947411v1  Conference papers
Hélène CarrèreAurélien KuckHajer MakhloufiPoonyasiri BoonpengAlexandre Arnoult et al.  Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys
6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States
hal-01947450v1  Conference papers
S AzaiziaAndrea BalocchiDelphine LagardeAlexandre ArnoultXavier Marie et al.  Electron spin dynamics in GaAsBi quantum wells
SPIE Photonics WEST, Jan 2017, San Francisco, United States
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hal-01768376v1  Poster communications
Stéphane CalvezAlexandre ArnoultPierre-François CalmonAurélie LecestreChantal Fontaine et al.  Buried Waveguides using a Quasi-Planar Process
European Conference on Integrated Optics, Apr 2017, Eindhoven, Netherlands. 2017
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hal-01768308v1  Conference papers
Stéphane CalvezAlexandre ArnoultPierre-François CalmonAurélie LecestreChantal Fontaine et al.  Réalisation de guides d’onde enterrés avec un procédé quasi-planaire
Journées Nationales de l'Optique Guidée (JNOG), Jul 2016, Bordeaux, France. 3p
hal-02052796v1  Conference papers
Andrea BalocchiSawsen AzaiziaHélène CarrèreThierry AmandAlexandre Arnoult et al.  Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2
hal-01947272v1  Conference papers
Ömer DönmezK. KaraAyse ErolE. AkalinHajer Makhloufi et al.  Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys
8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
hal-01947288v1  Conference papers
Sawsen AzaiziaAndrea BalocchiDelphine LagardeAlexandre ArnoultChantal Fontaine et al.  Electron spin polarization in GaAsBi quantum wells: Temperature dependence
8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany
hal-01947332v1  Conference papers
Simone MazzucatoHenri LehecHélène CarrèreT.T. ZhangDelphine Lagarde et al.  Carrier localization and electron spin relaxation dynamics in GaAsBi
5th International Workshop on Bismuth-Containing Semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland
hal-01947423v1  Conference papers
Sawsen AzaiziaAndrea BalocchiDelphine LagardeAlexandre ArnoultXavier Marie et al.  Carrier dynamics in GaAsBi quantum wells
International Workshop on Bismuth-Containing Semiconductors, Prof. Shumin Wang, Jul 2016, Shanghai, China
hal-01947368v1  Poster communications
Poonyasiri BoonpengAlexandre ArnoultAurélien KuckGuy LacosteChantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014
hal-01947444v1  Conference papers
Chantal FontaineSawsen AzaiziaAndrea BalocchiDelphine LagardeXavier Marie et al.  Dilute Bismides for Optoelectronic Applications
The 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), Dr Le Si Dang (IN, France); Prof. Kazuhito Hashimoto (NIMS, Japan); Prof. Nguyen Quang Liem (IMS, Vietnam), Nov 2016, Halong City, Vietnam
hal-01556269v1  Conference papers
Sabry KhalfallahPascal DubreuilLaurent EscotteRené LegrosChantal Fontaine et al.  Modulateur de cohérence intégré en GaAlAs sur GaAs au réseau de capteurs
7ème Journées Nationales de Microélectronique et Optoélectronique, Jan 1999, Egat, France
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hal-01721161v1  Journal articles
Fares ChouchaneGuilhem AlmuneauNikolay CherkashinAlexandre ArnoultGuy Lacoste et al.  Local stress-induced effects on AlGaAs/AlOx oxidation front shape
Applied Physics Letters, American Institute of Physics, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩