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hal-01910554v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
hal-01708282v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletTony RohelRozenn Bernard et al.  III-V/Si 3D crystal growth: a thermodynamic description
Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
hal-01497064v1  Poster communications
Ida LucciSimon CharbonnierYanping WangMounib BahriMaxime Vallet et al.  Relationship between antiphase domains, roughness and surface/interface energies during the epitaxial growth of GaP on Si
European Materials Research Society - Spring Meeting 2016 (E-MRS 2016 Spring Meeting), May 2016, Lille, France
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hal-01496666v1  Poster communications
Yanping WangAntoine LétoublonIda LucciC. CornetV. Favre-Nicolin et al.  X-ray Coherent Scattering on GaP/Si for III-V Monolithic Integration on Silicon
International Workshop on Phase Retrieval and Coherent Scattering (COHERENCE 2016), Jun 2016, Saint-Malo, France. 2016
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hal-01228809v1  Journal articles
Yanping WangJulien StodolnaMounib BahriJithesh KuyyalilThanh Tra Nguyen et al.  Abrupt GaP/Si hetero-interface using bistepped Si buffer
Applied Physics Letters, American Institute of Physics, 2015, 107 (19), pp.191603. ⟨10.1063/1.4935494⟩
hal-01910556v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletPascal TurbanYoan Léger et al.  Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
hal-01708047v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletPascal TurbanYoan Léger et al.  (114) GaP surface texturation on Si for water splitting
EMRS Spring meeting 2018, Jun 2018, Strasbourg, France
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hal-02497252v1  Poster communications
Rozenn BernardYanping WangMounib BahriThanh Tra NguyenRonan Tremblay et al.  GaP/Si Antiphase domains annihilation at the early stages of growth
Summer School of the French Epitaxy Network, Sep 2015, Porquerolles, France
hal-01910543v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
hal-01497149v1  Conference papers
Ida LucciSimon CharbonnierYanping WangMounib BahriMaxime Vallet et al.  Etude de la croissance cohérente de GaP/Si(001) en couche mince
Réunion plénière du GDR Pulse (PULSE 2016), Jul 2016, Marseille, France
hal-01910535v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A general III-V/Si growth process description
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
hal-01115004v1  Conference papers
Yanping WangAntoine LétoublonThanh Tra NguyenJulien StodolnaNicolas Bertru et al.  Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon
12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging, Sep 2014, Villard de Lans, France
hal-01497144v1  Conference papers
Ida LucciSimon CharbonnierYanping WangM. BahriMaxime Vallet et al.  3D GaP/Si(001) growth mode and antiphase boundaries
19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France
hal-02048639v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe III-V epitaxy on Si
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
hal-00654285v1  Conference papers
C. CornetCédric RobertThanh Tra NguyenWeiming GuoAlexandre Bondi et al.  Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
hal-00788308v1  Conference papers
Alexandre BondiC. CornetS. Boyer-RichardThanh Tra NguyenAntoine Létoublon et al.  Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy
European Materials Research Society Spring Meeting 2012 (E-MRS Spring 2012), May 2012, Strasbourg, France. pp.72-75, ⟨10.1016/j.tsf.2012.11.132⟩
hal-00918735v1  Conference papers
Samy AlmosniC. CornetThomas QuinciThanh Tra NguyenJithesh Kuyyalil et al.  UHVCVD-MBE growth cluster for III-N-V/Si solar cells
Compound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan
hal-01114877v1  Conference papers
Cédric RobertC. CornetThanh Tra NguyenM. NestoklonKatiane Pereira da Silva et al.  Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩
hal-00918738v1  Conference papers
Anne PonchetJulien StodolnaC. CornetAntoine LétoublonThanh Tra Nguyen et al.  Origin and observations of extended defects in III-V epilayers on Si
International Workshop "Silicon & Photonics", Jun 2013, Rennes, France
hal-01496758v1  Conference papers
Maxime ValletIda LucciMounib BahriAntoine LétoublonLudovic Largeau et al.  Role of marker layers on antiphase domains in GaP/Si heterostructures
Extended Defects in Semiconductors (EDS 2016), Sep 2016, Les Issambres, France