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hal-00722642v1  Conference papers
Houssam ArbessDavid TrémouillesMarise Bafleur. High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power technology
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Sep 2011, ANAHEIM, United States. pp.1B.2-1B.8
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hal-01310299v1  Conference papers
Tanguy PhulpinDavid TrémouillesKarine IsoirdPatrick AustinM Vellvehi et al.  Robustesse de MESFET SiC face aux décharges électrostatiques
SGE Symposium de Génie Electrique, Jun 2016, Grenoble, France
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hal-02278808v1  Conference papers
Chaymaa HalouiJosiane TasselliKarine IsoirdDavid TrémouillesPatrick Austin et al.  Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN
Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
hal-00401483v1  Conference papers
Nicolas GuitardFabien EsselyDavid TrémouillesMarise BafleurNicolas Nolhier et al.  Different failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure
European Symposium on Reliability of Electron Devices, Failure Physics and analysis (ESREF), 2005, arcachon, France. pp.1415-1420
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hal-01361658v1  Conference papers
Tanguy PhulpinKarine IsoirdDavid TrémouillesPatrick AustinJavier Leon et al.  Fiabilité de MESFET SiC face aux décharges électrostatiques
Symposium de Genie Electrique, Jun 2016, Grenoble, France
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hal-00383353v1  Conference papers
David TrémouillesYuan GaoMarise Bafleur. Pushing away the silicon limits of ESD protection structures: exploration of crystallographic orientation
BIPOLAR/BiCMOS Circuits and Technology Meeting (BCTM), Oct 2008, Monterey, United States. pp.200-203
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hal-00677458v1  Conference papers
Steven ThijsDavid TrémouillesDimitri LintenNatarajan Mahadeva IyerAlessio Griffoni et al.  Advanced ESD power clamp design for SOI FinFET CMOS technology
International Conference on IC Design and Technology (ICICDT 2010), Jun 2010, Grenoble, France. pp.43-46, ⟨10.1109/ICICDT.2010.5510299⟩
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hal-00383352v1  Conference papers
David TrémouillesGéraldine BertrandMarise BafleurNicolas NolhierLionel Lescouzères. Design Guidelines to Achieve a Very High ESD Robustness in a Self-Biased NPN
Electrical Overstress and Electrostatic Discharge Symposium, Oct 2002, Charlotte, United States. pp.281-288
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hal-00385694v1  Conference papers
Nicolas GuitardDavid TrémouillesStéphane AlvesMarise BafleurFélix Beaudoin et al.  ESD Induced Latent Defects In CMOS ICs And Reliability Impact
Electrical Overstress and Electrostatic Discharge (EOS/ESD) Symposium, Sep 2004, Dallas, United States. pp.174-181
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hal-00445676v1  Conference papers
Antoine DelmasNicolas NolhierDavid TrémouillesMarise BafleurNicolas Mauran et al.  Accurate Transient Behavior Measurement of High- Voltage ESD Protections Based on a Very Fast Transmission-Line Pulse System
31st Electrical Overstress/Electrostatic Discharge Symposium, 2009. EOS/ESD Symposium, Aug 2009, ANAHEIM, United States. pp.165-172
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hal-01339803v1  Conference papers
Tanguy PhulpinDavid TrémouillesKarine IsoirdDominique TournierPhilippe Godignon et al.  Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC
Journées Nationales du Réseau de Doctorants en Microélectronique, Jun 2015, Bordeaux, France
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hal-01339804v1  Poster communications
Tanguy PhulpinKarine IsoirdDavid TrémouillesPatrick Austin. Protection ESD pour MESFET SiC
Journées Intégration et Systèmes de Puissance 3D (ISP3D), Mar 2015, Tours, France. 2015
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hal-01411427v1  Journal articles
V. MortetDavid TrémouillesJ. BulířP. HubíkL. Heller et al.  Peculiarities of high electric field conduction in p-type diamond
Applied Physics Letters, American Institute of Physics, 2016, 108 (15), pp.152106. ⟨10.1063/1.4946853⟩
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hal-00668827v1  Journal articles
Jinyu Jason RuanNicolas MonnereauDavid TrémouillesNicolas MauranFabio Coccetti et al.  An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices
IEEE Transactions on Instrumentation and Measurement, Institute of Electrical and Electronics Engineers, 2012, pp.456-461. ⟨10.1109/TIM.2011.2161937⟩
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hal-00941876v1  Journal articles
Nicolas MonnereauFabrice CaignetDavid TrémouillesNicolas NolhierMarise Bafleur. A System-Level Electrostatic-Discharge-Protection Modeling Methodology for Time-Domain Analysis
IEEE Transactions on Electromagnetic Compatibility, Institute of Electrical and Electronics Engineers, 2013, 55 (1), pp.45-57. ⟨10.1109/TEMC.2012.2208973⟩
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