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hal-01955656v1  Journal articles
Sylvain NoblecourtFrédéric MoranchoKarine IsoirdPatrick AustinJosiane Tasselli. Design optimisation of the deep trench termination for superjunction power devices
International Journal of Microelectronics and Computer Science, Department of Microelectronics and Computer Science (DMCS) of Technical University of Łódź, 2015, 6 (4), pp.117-123
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hal-01191234v1  Conference papers
Sylvain NoblecourtFrédéric MoranchoKarine IsoirdPatrick AustinJosiane Tasselli. An improved junction termination design using deep trenches for superjunction power devices
International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2015), Jun 2015, Torùn, Poland. ⟨10.1109/MIXDES.2015.7208583⟩
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hal-02922723v1  Conference papers
Chaymaa HalouiToulon GaëtanJosiane TasselliYvon CordierÉric Frayssinet et al.  Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs
28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland
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tel-00010475v1  Habilitation à diriger des recherches
Frédéric Morancho. De nouvelles limites pour le compromis "résistance passante spécifique/tenue en tension" des composants unipolaires de puissance
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2004
hal-01862318v1  Patents
Nathalie BatutFrédéric MoranchoHenri TranducPierre Rossel. Perfectionnements apportés aux diodes Schottky
France, N° de brevet: 00 401643.2-2203. Rapport LAAS n° 00219. 2000
hal-01710524v1  Conference papers
Frédéric MoranchoSaleem HamadyBilal Beydoun. A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions
29th International Conference on Microelectronics (ICM 2017), Dec 2017, Beirut, Lebanon. ⟨10.1109/ICM.2017.8268868⟩
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hal-01108922v1  Conference papers
Saleem HamadyFrédéric MoranchoBilal BeydounPatrick AustinMathieu Gavelle. P-doped region below the AlGaN/GaN interface for normally-off HEMT
16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe, Aug 2014, Lappeenranta, Finland. pp.1 - 8, ⟨10.1109/EPE.2014.6910769⟩
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hal-02981903v2  Conference papers
Audrey ChapelleÉric FrayssinetYvon CordierYohann SpiegelLeïla Benmosfeta et al.  Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée
Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
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hal-01005655v1  Conference papers
Stéphane AlvesFrédéric MoranchoJean Michel ReynesJ. MargheritaI. Deram et al.  Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode
7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50
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hal-01005688v1  Conference papers
Moustafa ZerarkaPatrick AustinFrédéric MoranchoKarine IsoirdHoussam Arbess et al.  Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. 6 p
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hal-00991573v1  Conference papers
Loïc ThéolierHicham Mahfoz-KotbKarine IsoirdFrédéric Morancho. A new junction termination technique: The Deep Trench Termination (DT²)
21st International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2009., Jun 2009, Barcelona, Spain. pp.176-179, ⟨10.1109/ISPSD.2009.5158030⟩
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hal-01004508v1  Conference papers
Gaëtan ToulonIgnacio CortesFrédéric MoranchoAbdelhakim BourennaneKarine Isoird. Analysis and optimization of a novel high voltage striped STI-LDMOS transistor on SOI CMOS technology
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. pp.122-128
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hal-01002131v1  Conference papers
Stéphane AlvesFrédéric MoranchoJean Michel ReynesJ. MargheritaI. Deram et al.  Validation expérimentale du concept des "îlots flottants": réalisation d'une FLIdiodes verticale 95 volts
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur, Sep 2004, TOULOUSE, France. pp.4 PAGES
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hal-01002232v1  Conference papers
Loïc ThéolierFrédéric MoranchoKarine IsoirdHicham Mahfoz-KotbHenri Tranduc. The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications
2nd International Conference on Automotive Power Electronics (APE 2007), Sep 2007, PARIS, France. 8 p
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hal-01002255v1  Conference papers
Loïc ThéolierKarine IsoirdHenri TranducFrédéric MoranchoJaume Roig Guitart et al.  Performances dynamiques des transistors FLYMOSTM 65 Volts à canal N
Electronique de Puissance du Futur (EPF'2006), Jul 2006, GRENOBLE, France. 5 p