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hal-01102974
v1
Conference papers
Sylvain Noblecourt
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18th European Conference on Power Electronics and Applications (EPE'2016)
, Sep 2016, Karlsruhe, Germany.
⟨10.1109/EPE.2016.7695492⟩
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Symposium en Génie Electrique 2014 (SGE 2014)
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Design optimisation of the deep trench termination for superjunction power devices
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TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation
RADECS 2016 (RADiation Effects on Components and Systems)
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Conception de transistors MOS haute tension (1200 Volts) à tranchées profondes
ISP3D
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Henri Tranduc
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Frédéric Morancho
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Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs
8th International Seminar on Power Semiconductors (ISPS'06
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Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs
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P-doped region below the AlGaN/GaN interface for normally-off HEMT
16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe
, Aug 2014, Lappeenranta, Finland. pp.1 - 8,
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Étude paramétrique des performances statiques du transistor DT-SJMOS 1200 V
XIIème colloque Electronique de Puissance du Futur (EPF 2008)
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, Aug 2004, Pragues, Czech Republic. pp.47-50
tel-00165581
v1
Theses
Frédéric Morancho
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Le transistor MOS de puissance à tranchées : modélisation et limites de performances
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 1996. Français
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A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions
29th International Conference on Microelectronics (ICM 2017)
, Dec 2017, Beirut, Lebanon.
⟨10.1109/ICM.2017.8268868⟩
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Mathieu Gavelle
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Enhancement mode HEMT using fluorine implantation below the channel
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⟨10.1051/epjap/2015150062⟩
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A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance
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⟨10.1016/j.microrel.2018.07.119⟩
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hal-01054251
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Conference papers
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Frédéric Morancho
,
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,
Patrick Austin
,
Mathieu Gavelle
.
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CSW 2014
, May 2014, Montpellier, France
hal-01002191
v1
Conference papers
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,
Alain Cazarré
,
Frédéric Morancho
,
Karine Isoird
,
Yvon Cordier
.
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MGE 2008 4ème Colloque Matériaux du Génie Electrique
, May 2008, TOULOUSE, France. 4 p
hal-01002232
v1
Conference papers
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,
Frédéric Morancho
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Hicham Mahfoz-Kotb
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Henri Tranduc
.
The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications
2nd International Conference on Automotive Power Electronics (APE 2007)
, Sep 2007, PARIS, France. 8 p
1
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