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	1 2	Sort  Relevance  Author A→Z  Author Z→A  Title A→Z  Title Z→A  Date de publication croissante  Date de publication décroissante  Date de dépôt croissante  Date de dépôt décroissante Number 30 results per page 50 results per page 100 results per page × Merci d'indiquer la raison de votre demande Annuler Envoyer la demande  Tools  o  Export XML-TEI BibTeX EndNote CSV PDF RTF  Advanced export...  Syndicated feeds RSS ATOM
	hal-01102974v1  Conference papers Sylvain Noblecourt, Josiane Tasselli, Frédéric Morancho, Karine Isoird, Patrick Austin et al.  Optimisation de la diode à Superjonction à tranchées profondes pour des applications à 600V Symposium de Génie Electrique 2014, Jul 2014, Cachan, France
	hal-01002269v1  Conference papers Hicham Mahfoz-Kotb, Loïc Théolier, Frédéric Morancho, Karine Isoird, Pascal Dubreuil et al.  Étude de faisabilité d'une terminaison de jonction basée sur des tranchées profondes pour des composants haute tension (1200 V) XIIème colloque Electronique de Puissance du Futur (EPF 2008), Jul 2008, TOURS, France. 4 p
	hal-01955688v1  Conference papers Frank Torregrosa, Guillaume Sempere, Werner Schustereder, Philippe Godignon, Yohann Spiegel et al.  Advantages and challenges of Plasma Immersion Ion Implantation for Power devices manufacturing on Si, SiC and GaN using PULSION ® tool 22nd International Conference on Ion Implantation Technology (IIT), Sep 2018, Würzburg, Germany. 5p
	hal-01556254v1  Conference papers Emmanuel Marcault, David Trémouilles, Karine Isoird, Frédéric Morancho, Mathieu Gavelle. Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading 18th European Conference on Power Electronics and Applications (EPE'2016), Sep 2016, Karlsruhe, Germany. ⟨10.1109/EPE.2016.7695492⟩
	hal-01955720v1  Conference papers Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. Normally-Off AlGaN/GaN HEMT using fluorine implantation below the channel Symposium en Génie Electrique 2014 (SGE 2014), Jul 2014, Cachan, France
	hal-01955656v1  Journal articles Sylvain Noblecourt, Frédéric Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli. Design optimisation of the deep trench termination for superjunction power devices International Journal of Microelectronics and Computer Science, Department of Microelectronics and Computer Science (DMCS) of Technical University of Łódź, 2015, 6 (4), pp.117-123
	hal-01692046v2  Conference papers Moustafa Zerarka, Patrick Austin, Alain Bensoussan, Frédéric Morancho, André Durier. TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation RADECS 2016 (RADiation Effects on Components and Systems), Sep 2016, Brême, Germany. 4p., ⟨10.1109/TNS.2017.2710629⟩
	hal-01005697v1  Conference papers Loïc Théolier, Karine Isoird, Frédéric Morancho, Jaume Roig Guitart. Conception de transistors MOS haute tension (1200 Volts) à tranchées profondes ISP3D, Oct 2006, Montpellier, France
	hal-01005674v1  Conference papers Loïc Théolier, Karine Isoird, Henri Tranduc, Frédéric Morancho, Jaume Roig Guitart et al.  Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs 8th International Seminar on Power Semiconductors (ISPS'06, Aug 2006, Pragues, Czech Republic. pp.117-122
	hal-01005688v1  Conference papers Moustafa Zerarka, Patrick Austin, Frédéric Morancho, Karine Isoird, Houssam Arbess et al.  Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. 6 p
	hal-01108922v1  Conference papers Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. P-doped region below the AlGaN/GaN interface for normally-off HEMT 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe, Aug 2014, Lappeenranta, Finland. pp.1 - 8, ⟨10.1109/EPE.2014.6910769⟩
	hal-00849472v1  Journal articles Elias Al Alam, I. Cortes, Marie-Paule Besland, Antoine Goullet, L. Lajaunie et al.  Effect of surface preparation and interfacial layer on the quality of SiO(2)/GaN interfaces Journal of Applied Physics, American Institute of Physics, 2011, 109 (8), pp.084511. ⟨10.1063/1.3572236⟩
	hal-01002262v1  Conference papers Loïc Théolier, Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho. Étude paramétrique des performances statiques du transistor DT-SJMOS 1200 V XIIème colloque Electronique de Puissance du Futur (EPF 2008), Jul 2008, TOURS, France. 4 p
	hal-01005655v1  Conference papers Stéphane Alves, Frédéric Morancho, Jean Michel Reynes, J. Margherita, I. Deram et al.  Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode 7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50
	tel-00165581v1  Theses Frédéric Morancho. Le transistor MOS de puissance à tranchées : modélisation et limites de performances Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 1996. Français
	hal-01710524v1  Conference papers Frédéric Morancho, Saleem Hamady, Bilal Beydoun. A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions 29th International Conference on Microelectronics (ICM 2017), Dec 2017, Beirut, Lebanon. ⟨10.1109/ICM.2017.8268868⟩
	hal-01955606v1  Journal articles Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. Enhancement mode HEMT using fluorine implantation below the channel European Physical Journal: Applied Physics, EDP Sciences, 2015, 70 (3), pp.30102. ⟨10.1051/epjap/2015150062⟩
	hal-00994826v1  Conference papers Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation 20th LAAS International Science Conference Advanced Research for Better Tomorrow, Mar 2014, Hadath, Lebanon
	hal-01054216v1  Conference papers Richard Meunier, Alphonse Torres, Matthew Charles, Erwan Morvan, Marc Plissonnier et al.  AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by PEALD 224th ECS Meeting, Oct 2013, San Francisco, United States. pp.269-277, ⟨10.1149/05804.0269ecst⟩
	hal-00991599v1  Journal articles Hicham Mahfoz-Kotb, Karine Isoird, Frédéric Morancho, Loïc Théolier, Thierry Do Conto. Filling of very deep, wide trenches by BenzoCycloButene polymer Microsystem Technologies, Springer Verlag, 2009, 15 (9), pp.1395-1400. ⟨10.1007/s00542-009-0894-2⟩
	hal-00991676v1  Journal articles Loïc Théolier, Karine Isoird, Henri Tranduc, Frédéric Morancho, Jaume Roig Guitart et al.  Switching performance of 65 V vertical N-channel FLYMOSFETs Microelectronics Journal, Elsevier, 2008, 39 (6), pp.914-921. ⟨10.1016/j.mejo.2007.11.009⟩
	hal-01893190v1  Journal articles Dany Hachem, David Trémouilles, Frédéric Morancho, Gaëtan Toulon. A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance Microelectronics Reliability, Elsevier, 2018, 88-90, pp.406-410. ⟨10.1016/j.microrel.2018.07.119⟩
	hal-01054125v1  Journal articles Richard Meunier, Alphonse Torres, Erwan Morvan, Matthew Charles, P. Gaud et al.  AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by Plasma-Enhanced ALD Microelectronic Engineering, Elsevier, 2013, 109, pp.378-380. ⟨10.1016/j.mee.2013.04.020⟩
	hal-02278808v1  Conference papers Chaymaa Haloui, Josiane Tasselli, Karine Isoird, David Trémouilles, Patrick Austin et al.  Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
	hal-01054228v1  Conference papers Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. Scalable normally-off MIS-HEMT using Fluorine implantation below the channel SPEEDAM 2014, Jun 2014, Ischia, Italy
	hal-01002131v1  Conference papers Stéphane Alves, Frédéric Morancho, Jean Michel Reynes, J. Margherita, I. Deram et al.  Validation expérimentale du concept des "îlots flottants": réalisation d'une FLIdiodes verticale 95 volts Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur, Sep 2004, TOULOUSE, France. pp.4 PAGES
	hal-01054251v1  Conference papers Aurélie Lecestre, Pascal Dubreuil, Sylvain Noblecourt, Josiane Tasselli, Éric Imbernon et al.  Anisotropic Deep Reactive Ion Etching without Aspect Ratio Dependence Etching for silicon power devices PESM 2014 (Plasma Etch and Strip in Microtechnology), May 2014, Grenoble, France. 2p
	hal-01054235v1  Conference papers Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel CSW 2014, May 2014, Montpellier, France
	hal-01002191v1  Conference papers Elias Al Alam, Alain Cazarré, Frédéric Morancho, Karine Isoird, Yvon Cordier. Le Nitrure de Gallium : un Matériau d'Avenir pour la Conception de Composants de Puissance Haute Tension et Haute Température MGE 2008 4ème Colloque Matériaux du Génie Electrique, May 2008, TOULOUSE, France. 4 p
	hal-01002232v1  Conference papers Loïc Théolier, Frédéric Morancho, Karine Isoird, Hicham Mahfoz-Kotb, Henri Tranduc. The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications 2nd International Conference on Automotive Power Electronics (APE 2007), Sep 2007, PARIS, France. 8 p
	1 2	Sort  Relevance  Author A→Z  Author Z→A  Title A→Z  Title Z→A  Date de publication croissante  Date de publication décroissante  Date de dépôt croissante  Date de dépôt décroissante Number 30 results per page 50 results per page 100 results per page  Tools  o  Export XML-TEI BibTeX EndNote CSV PDF RTF  Advanced export...  Syndicated feeds RSS ATOM