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hal-01955720v1  Conference papers
Saleem HamadyFrédéric MoranchoBilal BeydounPatrick AustinMathieu Gavelle. Normally-Off AlGaN/GaN HEMT using fluorine implantation below the channel
Symposium en Génie Electrique 2014 (SGE 2014), Jul 2014, Cachan, France
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hal-01955656v1  Journal articles
Sylvain NoblecourtFrédéric MoranchoKarine IsoirdPatrick AustinJosiane Tasselli. Design optimisation of the deep trench termination for superjunction power devices
International Journal of Microelectronics and Computer Science, Department of Microelectronics and Computer Science (DMCS) of Technical University of Łódź, 2015, 6 (4), pp.117-123
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hal-01005674v1  Conference papers
Loïc ThéolierKarine IsoirdHenri TranducFrédéric MoranchoJaume Roig Guitart et al.  Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs
8th International Seminar on Power Semiconductors (ISPS'06, Aug 2006, Pragues, Czech Republic. pp.117-122
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hal-01005688v1  Conference papers
Moustafa ZerarkaPatrick AustinFrédéric MoranchoKarine IsoirdHoussam Arbess et al.  Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. 6 p
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hal-01108922v1  Conference papers
Saleem HamadyFrédéric MoranchoBilal BeydounPatrick AustinMathieu Gavelle. P-doped region below the AlGaN/GaN interface for normally-off HEMT
16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe, Aug 2014, Lappeenranta, Finland. pp.1 - 8, ⟨10.1109/EPE.2014.6910769⟩
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hal-01002262v1  Conference papers
Loïc ThéolierHicham Mahfoz-KotbKarine IsoirdFrédéric Morancho. Étude paramétrique des performances statiques du transistor DT-SJMOS 1200 V
XIIème colloque Electronique de Puissance du Futur (EPF 2008), Jul 2008, TOURS, France. 4 p
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hal-01005655v1  Conference papers
Stéphane AlvesFrédéric MoranchoJean Michel ReynesJ. MargheritaI. Deram et al.  Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode
7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50
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tel-00165581v1  Theses
Frédéric Morancho. Le transistor MOS de puissance à tranchées : modélisation et limites de performances
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 1996. Français
hal-01710524v1  Conference papers
Frédéric MoranchoSaleem HamadyBilal Beydoun. A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions
29th International Conference on Microelectronics (ICM 2017), Dec 2017, Beirut, Lebanon. ⟨10.1109/ICM.2017.8268868⟩
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hal-00994826v1  Conference papers
Saleem HamadyFrédéric MoranchoBilal BeydounPatrick AustinMathieu Gavelle. HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation
20th LAAS International Science Conference Advanced Research for Better Tomorrow, Mar 2014, Hadath, Lebanon
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hal-02278808v1  Conference papers
Chaymaa HalouiJosiane TasselliKarine IsoirdDavid TrémouillesPatrick Austin et al.  Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN
Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
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hal-01002131v1  Conference papers
Stéphane AlvesFrédéric MoranchoJean Michel ReynesJ. MargheritaI. Deram et al.  Validation expérimentale du concept des "îlots flottants": réalisation d'une FLIdiodes verticale 95 volts
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur, Sep 2004, TOULOUSE, France. pp.4 PAGES
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hal-01002232v1  Conference papers
Loïc ThéolierFrédéric MoranchoKarine IsoirdHicham Mahfoz-KotbHenri Tranduc. The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications
2nd International Conference on Automotive Power Electronics (APE 2007), Sep 2007, PARIS, France. 8 p
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