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hal-01955656
v1
Journal articles
Sylvain Noblecourt
,
Frédéric Morancho
,
Karine Isoird
,
Patrick Austin
,
Josiane Tasselli
.
Design optimisation of the deep trench termination for superjunction power devices
International Journal of Microelectronics and Computer Science
, Department of Microelectronics and Computer Science (DMCS) of Technical University of Łódź, 2015, 6 (4), pp.117-123
hal-01191234
v1
Conference papers
Sylvain Noblecourt
,
Frédéric Morancho
,
Karine Isoird
,
Patrick Austin
,
Josiane Tasselli
.
An improved junction termination design using deep trenches for superjunction power devices
International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2015)
, Jun 2015, Torùn, Poland.
⟨10.1109/MIXDES.2015.7208583⟩
hal-01556254
v1
Conference papers
Emmanuel Marcault
,
David Trémouilles
,
Karine Isoird
,
Frédéric Morancho
,
Mathieu Gavelle
.
Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading
18th European Conference on Power Electronics and Applications (EPE'2016)
, Sep 2016, Karlsruhe, Germany.
⟨10.1109/EPE.2016.7695492⟩
hal-00864740
v1
Journal articles
Elias Al Alam
,
Ignasi Cortés
,
T. Begou
,
Antoine Goullet
,
Frédéric Morancho
et al.
Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process
Materials Science Forum
, Trans Tech Publications Inc., 2012, 711, pp.228-232.
⟨10.4028/www.scientific.net/MSF.711.228⟩
hal-02918372
v1
Conference papers
Chaymaa Haloui
,
Gaëtan Toulon
,
Josiane Tasselli
,
Yvon Cordier
,
Éric Frayssinet
et al.
Développement technologique d'un HEMT normally- off avec une grille à barrière P-GaN
SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020)
, Nov 2020, Nantes, France
hal-02922723
v1
Conference papers
Chaymaa Haloui
,
Toulon Gaëtan
,
Josiane Tasselli
,
Yvon Cordier
,
Éric Frayssinet
et al.
Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs
28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
, Jun 2020, Wroclow, Poland
tel-00010475
v1
Habilitation à diriger des recherches
Frédéric Morancho
.
De nouvelles limites pour le compromis "résistance passante spécifique/tenue en tension" des composants unipolaires de puissance
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2004
hal-00849472
v1
Journal articles
Elias Al Alam
,
I. Cortes
,
Marie-Paule Besland
,
Antoine Goullet
,
L. Lajaunie
et al.
Effect of surface preparation and interfacial layer on the quality of SiO(2)/GaN interfaces
Journal of Applied Physics
, American Institute of Physics, 2011, 109 (8), pp.084511.
⟨10.1063/1.3572236⟩
hal-01054152
v1
Journal articles
Ignasi Cortés
,
Gaëtan Toulon
,
Frédéric Morancho
,
David Flores
,
Elsa Hugonnard-Bruyère
et al.
Analysis and optimization of lateral thin-film silicon-on-insulator (SOI) PMOS transistor with an NBL layer in the drift region
Solid-State Electronics
, Elsevier, 2012, 70, pp.8-13.
⟨10.1016/j.sse.2011.11.012⟩
hal-01862318
v1
Patents
Nathalie Batut
,
Frédéric Morancho
,
Henri Tranduc
,
Pierre Rossel
.
Perfectionnements apportés aux diodes Schottky
France, N° de brevet: 00 401643.2-2203. Rapport LAAS n° 00219. 2000
hal-01710524
v1
Conference papers
Frédéric Morancho
,
Saleem Hamady
,
Bilal Beydoun
.
A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions
29th International Conference on Microelectronics (ICM 2017)
, Dec 2017, Beirut, Lebanon.
⟨10.1109/ICM.2017.8268868⟩
hal-01065194
v1
Conference papers
Moustafa Zerarka
,
Patrick Austin
,
Frédéric Morancho
,
Karine Isoird
,
Josiane Tasselli
et al.
Durcissement des IGBT planar contre le déclenchement de " Single-Event Burnout
Symposium de Génie Électrique 2014
, Jul 2014, Cachan, France
hal-01102974
v1
Conference papers
Sylvain Noblecourt
,
Josiane Tasselli
,
Frédéric Morancho
,
Karine Isoird
,
Patrick Austin
et al.
Optimisation de la diode à Superjonction à tranchées profondes pour des applications à 600V
Symposium de Génie Electrique 2014
, Jul 2014, Cachan, France
hal-01108922
v1
Conference papers
Saleem Hamady
,
Frédéric Morancho
,
Bilal Beydoun
,
Patrick Austin
,
Mathieu Gavelle
.
P-doped region below the AlGaN/GaN interface for normally-off HEMT
16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe
, Aug 2014, Lappeenranta, Finland. pp.1 - 8,
⟨10.1109/EPE.2014.6910769⟩
hal-01054228
v1
Conference papers
Saleem Hamady
,
Frédéric Morancho
,
Bilal Beydoun
,
Patrick Austin
,
Mathieu Gavelle
.
Scalable normally-off MIS-HEMT using Fluorine implantation below the channel
SPEEDAM 2014
, Jun 2014, Ischia, Italy
hal-01054235
v1
Conference papers
Saleem Hamady
,
Frédéric Morancho
,
Bilal Beydoun
,
Patrick Austin
,
Mathieu Gavelle
.
Hybrid normally-off AlGaN/GaN HEMT using GIT technique with a p-region below the channel
CSW 2014
, May 2014, Montpellier, France
hal-01054251
v1
Conference papers
Aurélie Lecestre
,
Pascal Dubreuil
,
Sylvain Noblecourt
,
Josiane Tasselli
,
Éric Imbernon
et al.
Anisotropic Deep Reactive Ion Etching without Aspect Ratio Dependence Etching for silicon power devices
PESM 2014 (Plasma Etch and Strip in Microtechnology)
, May 2014, Grenoble, France. 2p
hal-01955666
v1
Journal articles
Raul Rodriguez
,
Benito González
,
Javier Garcia
,
Gaëtan Toulon
,
Frédéric Morancho
et al.
DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs
Electronics
, MDPI, 2018, 7 (10), pp.210.
⟨10.3390/electronics7100210⟩
hal-02981903
v2
Conference papers
Audrey Chapelle
,
Éric Frayssinet
,
Yvon Cordier
,
Yohann Spiegel
,
Leïla Benmosfeta
et al.
Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée
Symposium de Génie Electrique (SGE 2018)
, Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
hal-01065277
v1
Conference papers
Sylvain Noblecourt
,
Josiane Tasselli
,
Frédéric Morancho
.
Optimisation de la diode à Superjonction et à tranchées profondes pour des applications à 600V
Symposium de Génie Électrique 2014
, Jul 2014, Cachan, France
hal-01065392
v1
Conference papers
Saleem Hamady
,
Frédéric Morancho
,
Bilal Beydoun
,
Patrick Austin
,
Mathieu Gavelle
.
Un interrupteur GaN HEMT normally-off grâce à des ions fluor implantés sous l'interface AlGaN/GaN
Symposium de Génie Électrique 2014
, Jul 2014, Cachan, France
hal-01005697
v1
Conference papers
Loïc Théolier
,
Karine Isoird
,
Frédéric Morancho
,
Jaume Roig Guitart
.
Conception de transistors MOS haute tension (1200 Volts) à tranchées profondes
ISP3D
, Oct 2006, Montpellier, France
hal-01005655
v1
Conference papers
Stéphane Alves
,
Frédéric Morancho
,
Jean Michel Reynes
,
J. Margherita
,
I. Deram
et al.
Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode
7th International Seminar on Power Semiconductors (ISPS'04)
, Aug 2004, Pragues, Czech Republic. pp.47-50
hal-01005688
v1
Conference papers
Moustafa Zerarka
,
Patrick Austin
,
Frédéric Morancho
,
Karine Isoird
,
Houssam Arbess
et al.
Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs
International Seminar on Power Semiconductors (ISPS 2012)
, Aug 2012, Pragues, Czech Republic. 6 p
hal-00991573
v1
Conference papers
Loïc Théolier
,
Hicham Mahfoz-Kotb
,
Karine Isoird
,
Frédéric Morancho
.
A new junction termination technique: The Deep Trench Termination (DT²)
21st International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2009.
, Jun 2009, Barcelona, Spain. pp.176-179,
⟨10.1109/ISPSD.2009.5158030⟩
hal-01002191
v1
Conference papers
Elias Al Alam
,
Alain Cazarré
,
Frédéric Morancho
,
Karine Isoird
,
Yvon Cordier
.
Le Nitrure de Gallium : un Matériau d'Avenir pour la Conception de Composants de Puissance Haute Tension et Haute Température
MGE 2008 4ème Colloque Matériaux du Génie Electrique
, May 2008, TOULOUSE, France. 4 p
hal-01004508
v1
Conference papers
Gaëtan Toulon
,
Ignacio Cortes
,
Frédéric Morancho
,
Abdelhakim Bourennane
,
Karine Isoird
.
Analysis and optimization of a novel high voltage striped STI-LDMOS transistor on SOI CMOS technology
International Seminar on Power Semiconductors (ISPS 2012)
, Aug 2012, Pragues, Czech Republic. pp.122-128
hal-01002131
v1
Conference papers
Stéphane Alves
,
Frédéric Morancho
,
Jean Michel Reynes
,
J. Margherita
,
I. Deram
et al.
Validation expérimentale du concept des "îlots flottants": réalisation d'une FLIdiodes verticale 95 volts
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur
, Sep 2004, TOULOUSE, France. pp.4 PAGES
hal-01002232
v1
Conference papers
Loïc Théolier
,
Frédéric Morancho
,
Karine Isoird
,
Hicham Mahfoz-Kotb
,
Henri Tranduc
.
The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications
2nd International Conference on Automotive Power Electronics (APE 2007)
, Sep 2007, PARIS, France. 8 p
hal-01002255
v1
Conference papers
Loïc Théolier
,
Karine Isoird
,
Henri Tranduc
,
Frédéric Morancho
,
Jaume Roig Guitart
et al.
Performances dynamiques des transistors FLYMOSTM 65 Volts à canal N
Electronique de Puissance du Futur (EPF'2006)
, Jul 2006, GRENOBLE, France. 5 p
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