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hal-01736100v1  Conference papers
W. LerchS. PaulJ. NiessFuccio CristianoY. Lamrani et al.  Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions
Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
hal-01736106v1  Conference papers
S. PaulW. LerchXavier HebrasNikolay CherkashinFuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
hal-01721156v1  Conference papers
Fuccio CristianoY. QiuEléna Bedel-PereiraKarim HuetFulvio Mazzamuto et al.  Extended defects in ion-implanted si during nanosecond laser annealing
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
hal-01922649v1  Journal articles
B PawlakT. JanssensS. SinghI. Kuzma-FilipekJ. Robbelein et al.  Studies of implanted boron emitters for solar cell applications
Progress in Photovoltaics: Research and Applications, 2012, 20 (1), pp.106 - 110. ⟨10.1002/pip.1106⟩
hal-02392503v1  Conference papers
A-S. RoyetS. KerdilesP. Acosta AlbaC. BonafosV. Paillard et al.  Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩
hal-00720226v1  Conference papers
Ana BeltranSylvie Schamm-ChardonVincent MortetEléna Bedel-PereiraFuccio Cristiano et al.  Compositional characterization of SiC-SiO2 interfaces in MOSFETs
15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p
hal-01736096v1  Journal articles
Fuccio CristianoNikolay CherkashinP. CalvoY. LamraniXavier Hebras et al.  Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
hal-01921905v1  Journal articles
Z. EssaC. GaumerA. PakfarM. Gros-JeanM. Juhel et al.  Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks
Applied Physics Letters, American Institute of Physics, 2012, 101 (18), pp.182901. ⟨10.1063/1.4764558⟩
hal-01921897v1  Journal articles
S. BoninelliG. ImpellizzeriA. AlbertiF. PrioloFuccio Cristiano et al.  Role of the Ge surface during the end of range dissolution
Applied Physics Letters, American Institute of Physics, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩
hal-01922899v1  Journal articles
F. PancieraP FazziniM. ColletJ. BoucherEléna Bedel-Pereira et al.  End-of-range defects in germanium and their role in boron deactivation
Applied Physics Letters, American Institute of Physics, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩
hal-01922903v1  Journal articles
Sébastien DuguayT. PhilippeFuccio CristianoDidier Blavette. Direct imaging of boron segregation to extended defects in silicon
Applied Physics Letters, American Institute of Physics, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩
hal-01736115v1  Journal articles
Fuccio CristianoXavier HebrasNikolay CherkashinAlain ClaverieW. Lerch et al.  Clusters formation in ultralow-energy high-dose boron-implanted silicon
Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩
hal-01736061v1  Journal articles
S. BoninelliG. ImpellizzeriS. MirabellaF. PrioloE. Napolitani et al.  Formation and evolution of F nanobubbles in amorphous and crystalline Si
Applied Physics Letters, American Institute of Physics, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩
tel-00919958v1  Habilitation à diriger des recherches
Fuccio Cristiano. Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties
Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013
hal-01921825v1  Journal articles
Giuseppe FisicaroLourdes PelazMaria AboyPedro LopezMarkus Italia et al.  Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
hal-01690886v1  Conference papers
Richard MonflierAmin BenyoucefMégane TurpinFuccio CristianoEléna Bedel-Pereira. Etude des défauts induits par recuit laser excimer sur silicium
20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p
hal-01735436v1  Conference papers
Richard DaubriacEmmanuel ScheidS. JoblotR. BeneytonP Acosta Alba et al.  Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
hal-01947354v1  Poster communications
Hajer MakhloufiPoonyasiri BoonpengSimone MazzucatoHélène CarrèreT.T. Zhang et al.  Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster)
18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014