Skip to Main content Skip to Navigation

hal-02392503v1  Conference papers
A-S. RoyetS. KerdilesP. Acosta AlbaC. BonafosV. Paillard et al.  Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩
hal-01922899v1  Journal articles
Federico PancieraP FazziniM. ColletJ. BoucherEléna Bedel-Pereira et al.  End-of-range defects in germanium and their role in boron deactivation
Applied Physics Letters, American Institute of Physics, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩
hal-01736100v1  Conference papers
W. LerchS. PaulJ. NiessFuccio CristianoY. Lamrani et al.  Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions
Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
hal-01736106v1  Conference papers
S. PaulW. LerchXavier HebrasNikolay CherkashinFuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
hal-01736096v1  Journal articles
Fuccio CristianoNikolay CherkashinP. CalvoY. LamraniXavier Hebras et al.  Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
hal-01922649v1  Journal articles
B PawlakT. JanssensS. SinghI. Kuzma-FilipekJ. Robbelein et al.  Studies of implanted boron emitters for solar cell applications
Progress in Photovoltaics, Wiley, 2012, 20 (1), pp.106 - 110. ⟨10.1002/pip.1106⟩
hal-03097960v1  Conference papers
Anne-Sophie RoyetL. DagaultSebastien KerdilesPablo Acosta AlbaJ.P Barnes et al.  Undoped SiGe material calibration for numerical nanosecond laser annealing simulations
SISPAD International Conference on Simulation of Semiconductor Processes and Devices, Sep 2020, VIRTUAL CONFERENCE, Japan
hal-01921268v1  Journal articles
Fuccio CristianoM. ShayestehR. DuffyK. HuetF. Mazzamuto et al.  Defect evolution and dopant activation in laser annealed Si and Ge
Materials Science in Semiconductor Processing, Elsevier, 2016, 42, pp.188 - 195. ⟨10.1016/j.mssp.2015.09.011⟩
hal-01921897v1  Journal articles
S. BoninelliG. ImpellizzeriA. AlbertiF. PrioloFuccio Cristiano et al.  Role of the Ge surface during the end of range dissolution
Applied Physics Letters, American Institute of Physics, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩
hal-01922903v1  Journal articles
Sébastien DuguayT. PhilippeFuccio CristianoDidier Blavette. Direct imaging of boron segregation to extended defects in silicon
Applied Physics Letters, American Institute of Physics, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩