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hal-02161148v1  Conference papers
Jean-Marie DucereAnne HémeryckAlain EstèveMehdi Djafari RouhaniGeorges Landa et al.  CO and CO2 detection by SnO2: a DFT study
E-MRS Conference, Jun 2009, Strasbourg, France
hal-01481857v1  Journal articles
A ZwickGeorges LandaMa RenucciRobert Carles. RAMAN-SCATTERING IN THE TERNARY PHASE HFS3-XSEX
Physical Review B : Condensed matter and materials physics, American Physical Society, 1982, 26 (10), pp.5694-5701. ⟨10.1103/PhysRevB.26.5694⟩
hal-01481828v1  Journal articles
Jesse GroenenRobert CarlesGeorges LandaC Guerret-PiecourtC Fontaine et al.  Optical-phonon behavior in Ga1-xInxAs: The role of microscopic strains and ionic plasmon coupling
Physical Review B : Condensed matter and materials physics, American Physical Society, 1998, 58 (16), pp.10452-10462. ⟨10.1103/PhysRevB.58.10452⟩
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hal-01481822v1  Journal articles
Pascal PuechE FlahautA SapelkinH HubelDj Dunstan et al.  Nanoscale pressure effects in individual double-wall carbon nanotubes
Physical Review B : Condensed matter and materials physics, American Physical Society, 2006, 73 (23), ⟨10.1103/PhysRevB.73.233408⟩
hal-01481853v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJp RedoulesJb Renucci. RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS
Journal of Physics C: Solid State Physics, Institute of Physics (IOP), 1986, 19 (10), pp.1471-1479. ⟨10.1088/0022-3719/19/10/004⟩
hal-01481835v1  Book sections
Pascal PuechP PizaniO PagesGeorges LandaRobert Carles et al.  LOCAL RAMAN PROBING OF SEMICONDUCTOR EPILAYERS IN THE VICINITY OF SURFACE AND INTERFACE
Defect Recognition and Image Processing in Semiconductors and Devices, pp.93-96, 1994, 0951-3248;0-7503-0294-1
hal-01481834v1  Journal articles
Pascal PuechGeorges LandaRobert CarlesPs PizaniE Daran et al.  STRAIN RELAXATION IN [001]-GAAS/CAF2 AND [111]-GAAS/CAF2 ANALYZED BY RAMAN-SPECTROSCOPY
Journal of Applied Physics, American Institute of Physics, 1995, 77 (3), pp.1126-1132. ⟨10.1063/1.358975⟩
hal-01481827v1  Journal articles
J Dalla TorreMd RouhaniR MalekD EsteveGeorges Landa. Beyond the solid on solid model: An atomic dislocation formation mechanism
Journal of Applied Physics, American Institute of Physics, 1998, 84 (10), pp.5487-5494. ⟨10.1063/1.368312⟩
hal-01481844v1  Journal articles
A MunozyagueGeorges LandaRobert CarlesC FontaineEléna Bedel-Pereira. OPTICAL DETERMINATION OF STRAINS IN HETEROSTRUCTURES - GAAS/SI AS AN EXAMPLE
Journal of Applied Physics, American Institute of Physics, 1989, 66 (1), pp.196-200. ⟨10.1063/1.343904⟩
hal-01481850v1  Journal articles
C FontaineH BenarfaEléna Bedel-PereiraA MunozyagueGeorges Landa et al.  MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES
Journal of Applied Physics, American Institute of Physics, 1986, 60 (1), pp.208-212. ⟨10.1063/1.337683⟩
hal-01481851v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJb RenucciJm Roquais et al.  CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY
Journal of Applied Physics, American Institute of Physics, 1986, 60 (6), pp.1980-1984. ⟨10.1063/1.337199⟩
hal-01481852v1  Journal articles
Georges LandaRobert CarlesJb RenucciC FontaineEléna Bedel-Pereira et al.  RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2
Journal of Applied Physics, American Institute of Physics, 1986, 60 (3), pp.1025-1031. ⟨10.1063/1.337392⟩
hal-01481847v1  Journal articles
N SaintcricqGeorges LandaJb RenucciI HardyA Munozyague. RAMAN DETERMINATION OF THE COMPOSITION IN SEMICONDUCTOR TERNARY SOLID-SOLUTIONS
Journal of Applied Physics, American Institute of Physics, 1987, 61 (3), pp.1206-1208. ⟨10.1063/1.338168⟩
hal-01481830v1  Journal articles
Pascal PuechGeorges LandaRobert CarlesC Fontaine. Strain effects on optical phonons in (111) GaAs layers analyzed by Raman scattering
Journal of Applied Physics, American Institute of Physics, 1997, 82 (9), pp.4493-4499. ⟨10.1063/1.366182⟩
hal-01481836v1  Journal articles
Pascal PuechGeorges LandaRobert CarlesPs PizaniE Daran et al.  RAMAN-SCATTERING STUDY OF [HHK]-GAAS/(SI OR CAF2) STRAINED HETEROSTRUCTURES
Journal of Applied Physics, American Institute of Physics, 1994, 76 (5), pp.2773-2780. ⟨10.1063/1.357542⟩
hal-01481840v1  Journal articles
Robert CarlesAdnen MlayahGeorges LandaOa KusnetsovLk Orlov et al.  RAMAN-SCATTERING IN GE-GE1-XSIX SUPERLATTICE
Superlattices and Microstructures, Elsevier, 1993, 13 (1), pp.109-114. ⟨10.1006/spmi.1993.1022⟩