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hal-03012605v1  Journal articles
Maxime LevillayerSophie DuzellierInès MassiotThierry NunsChristophe Inguimbert et al.  Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, In press
hal-03099765v1  Poster communications
Paul OublonFrédéric MartinezS. ParolaDaniel ChemisanaAlexis Vossier et al.  Physics of GaAs solar cells operating under thermal stress
Les Houches School of Physics - Physics of Solar Cells: from basic principles to advanced characterization, Mar 2020, Les Houches, France
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hal-03012129v1  Conference papers
Maxime LevillayerSophie DuzellierHélène CarrèreInès MassiotThierry Nuns et al.  Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application
47th IEEE Photovoltaic Specialists Conference (PVSC 47), IEEE, Jun 2020, Calgary (virtual), Canada. ⟨10.1109/PVSC45281.2020.9300570⟩
hal-01610933v1  Conference papers
Kevin LouarnYann ClaveauAlexandre ArnoultChantal FontaineJonathan Colin et al.  Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïques
Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France