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hal-01955656v1  Journal articles
Sylvain NoblecourtFrédéric MoranchoKarine IsoirdPatrick AustinJosiane Tasselli. Design optimisation of the deep trench termination for superjunction power devices
International Journal of Microelectronics and Computer Science, Department of Microelectronics and Computer Science (DMCS) of Technical University of Łódź, 2015, 6 (4), pp.117-123
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hal-01191234v1  Conference papers
Sylvain NoblecourtFrédéric MoranchoKarine IsoirdPatrick AustinJosiane Tasselli. An improved junction termination design using deep trenches for superjunction power devices
International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2015), Jun 2015, Torùn, Poland. ⟨10.1109/MIXDES.2015.7208583⟩
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hal-02922723v1  Conference papers
Chaymaa HalouiToulon GaëtanJosiane TasselliYvon CordierÉric Frayssinet et al.  Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs
28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland
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hal-02981903v2  Conference papers
Audrey ChapelleÉric FrayssinetYvon CordierYohann SpiegelLeïla Benmosfeta et al.  Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée
Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
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hal-01005688v1  Conference papers
Moustafa ZerarkaPatrick AustinFrédéric MoranchoKarine IsoirdHoussam Arbess et al.  Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. 6 p
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hal-02278808v1  Conference papers
Chaymaa HalouiJosiane TasselliKarine IsoirdDavid TrémouillesPatrick Austin et al.  Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN
Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France
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halshs-02329822v1  Conference papers
Lya FontaineKarine IsoirdJosiane TasselliAlain CazarréPatrick Austin et al.  Optimisation des techniques de microfabrication sur diamant
Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2019), Jun 2019, Montpellier, France. pp.691 - 697
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hal-01245628v2  Conference papers
Richard MonflierKarine IsoirdAlain CazarréJosiane TasselliAlexandra Servel et al.  Diodes Schottky diamant fonctionnant à 200°C
Symposium de Génie Electrique, G2Elab, Jun 2016, Grenoble, France
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hal-01618095v1  Journal articles
Richard MonflierKarine IsoirdAlain CazarréJosiane TasselliAlexandra Servel et al.  Diamond Schottky diodes operating at 473 K
European Power Electronics and Drives Journal, Taylor & Francis, 2017, 27 (3), pp.118-124. ⟨10.1080/09398368.2017.1388625⟩
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hal-02324807v1  Conference papers
Lya FontaineKarine IsoirdJosiane TasselliAlain CazarréPatrick Austin et al.  Développement de briques technologiques pour la réalisation de composants de puissance sur diamant
Conférence des Jeunes Chercheurs en Génie Electrique (JCGE 2019), Jun 2019, Oléron, France
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hal-01005966v1  Journal articles
Moustafa ZerarkaPatrick AustinFrédéric MoranchoKarine IsoirdHoussam Arbess et al.  Analysis Study of Sensitive Volume and Triggering Criteria of SEB in Super-Junction MOSFETs
IET Circuits, Devices & Systems, Institution of Engineering and Technology, 2014, 8 (3), pp.197-204
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hal-02324743v1  Conference papers
Lya FontaineKarine IsoirdJosiane TasselliPatrick AustinAlain Cazarré et al.  Ohmic contacts study of P + N diodes on (111) and (100) diamond
13th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2019), Jul 2019, Toulouse, France