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hal-02377367v1
Conference papers
175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩ |
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hal-02377372v1
Journal articles
Diamond power devices: State of the art, modelling and figures of merit Journal of Physics D: Applied Physics, IOP Publishing, 2019, 53 (9), pp.093001. ⟨10.1088/1361-6463/ab4eab⟩ |
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hal-01590457v1
Conference papers
Diamond Devices for Power Electronics 11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia |
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hal-03017013v1
Journal articles
High temperature operation of a monolithic bidirectional diamond switch Diamond and Related Materials, Elsevier, 2020, pp.108185. ⟨10.1016/j.diamond.2020.108185⟩ |
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hal-02981917v1
Conference papers
Transistors Haute Tension de type MOSFET et MESFET en diamant pour l'électronique de puissance Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France |
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