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hal-01955656v1  Journal articles
Sylvain NoblecourtFrédéric MoranchoKarine IsoirdPatrick AustinJosiane Tasselli. Design optimisation of the deep trench termination for superjunction power devices
International Journal of Microelectronics and Computer Science, Department of Microelectronics and Computer Science (DMCS) of Technical University of Łódź, 2015, 6 (4), pp.117-123
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hal-01191234v1  Conference papers
Sylvain NoblecourtFrédéric MoranchoKarine IsoirdPatrick AustinJosiane Tasselli. An improved junction termination design using deep trenches for superjunction power devices
International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2015), Jun 2015, Torùn, Poland. ⟨10.1109/MIXDES.2015.7208583⟩
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hal-02922723v1  Conference papers
Chaymaa HalouiToulon GaëtanJosiane TasselliYvon CordierÉric Frayssinet et al.  Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs
28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland
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hal-01339804v1  Poster communications
Tanguy PhulpinKarine IsoirdDavid TrémouillesPatrick Austin. Protection ESD pour MESFET SiC
Journées Intégration et Systèmes de Puissance 3D (ISP3D), Mar 2015, Tours, France. 2015
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hal-02981903v2  Conference papers
Audrey ChapelleÉric FrayssinetYvon CordierYohann SpiegelLeïla Benmosfeta et al.  Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée
Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5
hal-02275712v1  Conference papers
Mihai LazarKarine IsoirdLaurent OttavianiMarie-Laure LocatelliChristophe Raynaud et al.  Bipolar silicon carbide power diodes realized by aluminum implantations and high temperature rf-annealing
43rd Electronic Materials Conference (EMC 2001), Jun 2001, Notre Dame, IN, United States
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hal-02492270v1  Conference papers
Marie-Laure LocatelliKarine IsoirdS. DinculescuVincent BleyThierry Lebey et al.  Study of suitable dielectric material properties for high electric field and high temperature power semiconductor environment
10th European Conference on Power Electronics and Applications (EPE'2003), Sep 2003, Toulouse, France
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hal-01002185v1  Conference papers
Gabriel CivracHenri SchneiderMarie-Laure LocatelliKarine IsoirdHui Ding. Le Diamant pour l'Electronique de Puissance - Développement des Technologies Associées
MGE 2008 4ème Colloque Matériaux du Génie Electrique, May 2008, TOULOUSE, France. 4 p
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hal-01006006v1  Conference papers
Houssam ArbessKarine IsoirdSaleem Hamady. New termination architecture for 1700 V diamond schottky diode
2013 15th European Conference on Power Electronics and Applications (EPE), Sep 2013, Lille, France. pp.1-8
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hal-01005655v1  Conference papers
Stéphane AlvesFrédéric MoranchoJean Michel ReynesJ. MargheritaI. Deram et al.  Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode
7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50
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hal-01005688v1  Conference papers
Moustafa ZerarkaPatrick AustinFrédéric MoranchoKarine IsoirdHoussam Arbess et al.  Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. 6 p
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hal-01005931v1  Conference papers
Gaëtan ToulonKarine IsoirdAbdelhakim Bourennane. Amélioration des performances du thyristor à l'état bloqué en haute température
Conférence Electronique de Puissance du Futur (EPF 2012), Jul 2012, BORDEAUX, France. 4 p
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hal-00991573v1  Conference papers
Loïc ThéolierHicham Mahfoz-KotbKarine IsoirdFrédéric Morancho. A new junction termination technique: The Deep Trench Termination (DT²)
21st International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2009., Jun 2009, Barcelona, Spain. pp.176-179, ⟨10.1109/ISPSD.2009.5158030⟩
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hal-01004604v1  Conference papers
Houssam ArbessKarine Isoird. Field plate termination for high voltage diamond Schottky diode
International Conference on Microelectronics ( ICM ) 2013, Dec 2013, Beyrouth, Lebanon. pp.25-28
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hal-01004508v1  Conference papers
Gaëtan ToulonIgnacio CortesFrédéric MoranchoAbdelhakim BourennaneKarine Isoird. Analysis and optimization of a novel high voltage striped STI-LDMOS transistor on SOI CMOS technology
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. pp.122-128
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hal-01004495v1  Conference papers
Gaëtan ToulonAbdelhakim BourennaneKarine Isoird. Impact of a backside Schottky contact on the thyristor characteristics at high temperature
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. pp.131 à 136