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hal-01132683v1  Conference papers
Christyves ChevallierNicolas FressengeasJoël JacquetGuilhem AlmuneauYouness Laaroussi et al.  Parameter-tolerant design of high contrast gratings
Photonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720N-93720N-8, ⟨10.1117/12.2081595⟩
hal-01132804v1  Conference papers
Guilhem AlmuneauYouness LaaroussiChristyves ChevallierFrédéric GentyNicolas Fressengeas et al.  GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELs
Photonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720S-93720S-9, ⟨10.1117/12.2084515⟩
hal-01858329v1  Conference papers
Youness LaaroussiLaurent CeruttiJean-Baptiste DoucetPaul FadelGuilhem Almuneau. Wet thermal oxidation of AlAsSb for lateral confinement in GaSb-based VCSELs
International Symposium on Compound Semiconductors 2011 (ISCS), May 2011, Berlin, Germany. 2p
hal-01795440v1  Conference papers
Aurore VicetQ. GaimardAlexandre LarrueLaurent CeruttiT. Nguyenba et al.  New Index-Coupled Distributed-Feedback Gasb-Based Lasers Diodes In The 2 to 3 µm Wavelength Range. Applications To Spectroscopy
3rd International Workshop on Opportunities and Challenges in Mid-Infrared Laser-based Gas Sensing (MIRSENS 3), Mar 2015, Würzburg, Germany
hal-01909068v1  Conference papers
Laurent PedesseauIda LucciSimon CharbonnierMaxime ValletPascal Turban et al.  GaP Template on Si for Solar Water Splitting: surface energy engineering
nanoGe Fall Meeting 2018 (NGFM18), Oct 2018, Torremolinos, Spain
hal-01910543v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
hal-02048639v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe III-V epitaxy on Si
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
hal-01910554v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
hal-01708047v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletPascal TurbanYoan Léger et al.  (114) GaP surface texturation on Si for water splitting
EMRS Spring meeting 2018, Jun 2018, Strasbourg, France
hal-01708282v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletTony RohelRozenn Bernard et al.  III-V/Si 3D crystal growth: a thermodynamic description
Energy Materials Nanotechnology Meeting 2017 / Collaborative Conference on Crystal Growth (EMN 3CG 2017), Aug 2017, Berlin, Germany
hal-01910556v1  Conference papers
Ida LucciSimon CharbonnierMaxime ValletPascal TurbanYoan Léger et al.  Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S)
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hal-01833206v1  Journal articles
Ida LucciSimon CharbonnierLaurent PedesseauM. ValletLaurent Cerutti et al.  Universal description of III-V/Si epitaxial growth processes
Physical Review Materials, American Physical Society, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩
hal-01910535v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A general III-V/Si growth process description
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France