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hal-01736026v1  Book sections
Martin HÿtchFlorent HoudellierNikolay CherkashinShay RebohElsa Javon et al.  Dark-Field Electron Holography for Strain Mapping
Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
hal-01736071v1  Journal articles
Nikolay CherkashinMartin HÿtchEtienne SnoeckFlorian HüeJ.M. Hartmann et al.  Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩
hal-01763051v1  Conference papers
Nikolay CherkashinFlorent HoudellierMartin HÿtchM Korytov. Measurement of crystalline lattice strain by transmission electron microscopy”
14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France
hal-01736043v1  Conference papers
A.F. TsatsulnikovW.V. LundinA.V. SakharovE.E. ZavarinS.O. Usov et al.  Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs
PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
hal-01736041v1  Conference papers
A.V. SakharovW.V. LundinE.E. ZavarinM.A. SinitsynS.O. Usov et al.  Optoelectronic structures with InAlN layers grown by MOVPE
30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
hal-01742322v1  Book sections
Florent HoudellierMartin HÿtchFlorian HüeEtienne Snoeck. CHAPTER 6 - Aberration Correction With the SACTEM-Toulouse: From Imaging to Diffraction
P.W.Hawkes. Advances in Imaging and Electron Physics vol 153, 153, Academic press, 2008, Aberration-Corrected Electron Microscopy, 978-0-12-374220-9. ⟨10.1016/S1076-5670(08)01006-9⟩
hal-01736083v1  Conference papers
O. WeberY. BogumilowiczT. ErnstJ.-M. HartmannFrédérique Ducroquet et al.  Strained Si and Ge MOSFETs with high-K/metal gate stack for high mobility dual channel CMOS
IEEE International Electron Devices Meeting, 2005, Dec 2005, Washington, United States. pp.137-140, ⟨10.1109/IEDM.2005.1609288⟩
hal-01719498v1  Conference papers
Victor BoureauDaniel BenoitBénédicte Warot-FonroseMartin HÿtchAlain Claverie. Germanium condensation for co-integration: Strain study by dark-field electron holography
Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown Region. pp.34-36, ⟨10.1109/NMDC.2014.6997415⟩
hal-01721150v1  Conference papers
Daniele BarettinMatthias auf Der MaurAlessandro PecchiaWalter RodriguesAndrei F. Tsatsulnikov et al.  Realistic model of LED structure with InGaN quantum-dots active region
Nanotechnology (IEEE-NANO) 2015 IEEE 15th International Conference on, 2015, Unknown, Unknown Region. pp.1543-1546, ⟨10.1109/NANO.2015.7388939⟩
hal-01763638v1  Conference papers
Alain ClaverieVictor BoureauMartin HÿtchNikolay Cherkashin. Strain imaging of processed layers and devices by dark field electron holography
Congress of the Electron Microscopy Society of India, Jul 2014, ??, India