Skip to Main content Skip to Navigation
  1. Search


hal-01736030v1  Journal articles
V.M. Ustinov, A.F. Tsatsulnikov, V.V. Lundin, A.V. Sakharov, A.E. Nikolaev et al.  Monolithic white LEDs: Approaches, technology, design
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Springer Verlag, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩
hal-01742322v1  Book sections
Florent Houdellier, Martin Hÿtch, Florian Hüe, Etienne Snoeck. CHAPTER 6 - Aberration Correction With the SACTEM-Toulouse: From Imaging to Diffraction
P.W.Hawkes. Advances in Imaging and Electron Physics vol 153, 153, Academic press, 2008, Aberration-Corrected Electron Microscopy, 978-0-12-374220-9. ⟨10.1016/S1076-5670(08)01006-9⟩
...
hal-00662962v1  Conference papers
Frédéric Mazaleyrat, Mehdi Ammar, Martino Lobue, Jean-Pierre Bonnet, Pierre Audebert et al.  Silica coated nanoparticles: synthesis,magnetic properties and spin structure
ISMANAM, Aug 2007, Corfou, Greece. pp.473-478, ⟨10.1016/j.jallcom.2008.08.121⟩
...
hal-01736041v1  Conference papers
A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, S.O. Usov et al.  Optoelectronic structures with InAlN layers grown by MOVPE
30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
...
hal-01736043v1  Conference papers
A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov et al.  Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs
PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
...
hal-01736054v1  Journal articles
S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag et al.  End of range defects in Ge
Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
...
hal-00090302v1  Journal articles
Etienne Snoeck, Jérôme Majimel, M. O. Ruault, Martin Hÿtch. Characterization of helium bubble size and faceting by electron holography
Journal of Applied Physics, American Institute of Physics, 2006, 100 (2), 023519 (5 p.). ⟨10.1063/1.2216791⟩
...
hal-01707818v1  Journal articles
Thibaud Denneulin, Wanjoo Maeng, Chang-Beom Eom, Martin Hÿtch. Lattice reorientation in tetragonal PMN-PT thin film induced by focused ion beam preparation for transmission electron microscopy
Journal of Applied Physics, American Institute of Physics, 2017, 121 (5), pp.055302. ⟨10.1063/1.4975114⟩
hal-01736057v1  Conference papers
Nikolay Cherkashin, A. Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch et al.  Determination of strain within Si1-yCy layers grown by CVD on a Si substrate
Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
hal-01763051v1  Conference papers
Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, M Korytov. Measurement of crystalline lattice strain by transmission electron microscopy”
14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France
hal-01763638v1  Conference papers
Alain Claverie, Victor Boureau, Martin Hÿtch, Nikolay Cherkashin. Strain imaging of processed layers and devices by dark field electron holography
Congress of the Electron Microscopy Society of India, Jul 2014, ??, India
hal-01742015v1  Journal articles
A. Gouye, Florian Hüe, A. Halimaoui, O. Kermarrec, Y. Campidelli et al.  Selective growth of tensily strained Si1−yCy films on patterned Si substrates
Materials Science in Semiconductor Processing, Elsevier, 2009, 12 (1-2), pp.34 - 39. ⟨10.1016/j.mssp.2009.07.006⟩
...
hal-00678407v1  Journal articles
Florent Houdellier, Aurélien Masseboeuf, Marc Monthioux, Martin Hÿtch. New carbon cone nanotip for use in a highly coherent cold field emission electron microscope
Carbon, Elsevier, 2012, 50 (5), pp.2037-2044. ⟨10.1016/j.carbon.2012.01.023⟩
hal-01736026v1  Book sections
Martin Hÿtch, Florent Houdellier, Nikolay Cherkashin, Shay Reboh, Elsa Javon et al.  Dark-Field Electron Holography for Strain Mapping
Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
...
hal-01742020v1  Journal articles
Florian Hüe, Martin Hÿtch, Florent Houdellier, Hugo Bender, Alain Claverie. Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography
Applied Physics Letters, American Institute of Physics, 2009, 95 (7), pp.73103 - 73103. ⟨10.1063/1.3192356⟩
...
hal-01430586v2  Journal articles
Ludvig de Knoop, Christophe Gatel, Florent Houdellier, Marc Monthioux, Aurélien Masseboeuf et al.  Low-noise cold-field emission current obtained between two opposed carbon cone nanotips during in situ transmission electron microscope biasing
Applied Physics Letters, American Institute of Physics, 2015, 106 (26), pp.263101. ⟨10.1063/1.4923245⟩
...
hal-01742002v1  Journal articles
D. Cammilleri, V. Yam, F. Fossard, C. Renard, D. Bouchier et al.  Lateral epitaxial growth of germanium on silicon oxide
Applied Physics Letters, American Institute of Physics, 2008, 93 (4), pp.43110 - 43110. ⟨10.1063/1.2963363⟩
...
hal-01736028v1  Journal articles
Nikolay Cherkashin, Shay Reboh, Martin Hÿtch, Alain Claverie, V.V. Preobrazhenskii et al.  Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy
Applied Physics Letters, American Institute of Physics, 2013, 102 (17), pp.173115. ⟨10.1063/1.4804380⟩

CONTACT

scd.ao@univ-tlse3.fr