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hal-01736030v1  Journal articles
V.M. UstinovA.F. TsatsulnikovV.V. LundinA.V. SakharovA.E. Nikolaev et al.  Monolithic white LEDs: Approaches, technology, design
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Springer Verlag, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩
hal-01742322v1  Book sections
Florent HoudellierMartin HÿtchFlorian HüeEtienne Snoeck. CHAPTER 6 - Aberration Correction With the SACTEM-Toulouse: From Imaging to Diffraction
P.W.Hawkes. Advances in Imaging and Electron Physics vol 153, 153, Academic press, 2008, Aberration-Corrected Electron Microscopy, 978-0-12-374220-9. ⟨10.1016/S1076-5670(08)01006-9⟩
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hal-01736041v1  Conference papers
A.V. SakharovW.V. LundinE.E. ZavarinM.A. SinitsynS.O. Usov et al.  Optoelectronic structures with InAlN layers grown by MOVPE
30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
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hal-01736043v1  Conference papers
A.F. TsatsulnikovW.V. LundinA.V. SakharovE.E. ZavarinS.O. Usov et al.  Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs
PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
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hal-01736054v1  Journal articles
S. KoffelNikolay CherkashinFlorent HoudellierMartin HÿtchGérard Benassayag et al.  End of range defects in Ge
Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
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hal-00090302v1  Journal articles
Etienne SnoeckJérôme MajimelM. O. RuaultMartin Hÿtch. Characterization of helium bubble size and faceting by electron holography
Journal of Applied Physics, American Institute of Physics, 2006, 100 (2), 023519 (5 p.). ⟨10.1063/1.2216791⟩
hal-01736057v1  Conference papers
Nikolay CherkashinA. GouyeFlorian HüeFlorent HoudellierMartin Hÿtch et al.  Determination of strain within Si1-yCy layers grown by CVD on a Si substrate
Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
hal-01763051v1  Conference papers
Nikolay CherkashinFlorent HoudellierMartin HÿtchM Korytov. Measurement of crystalline lattice strain by transmission electron microscopy”
14ème colloque de la Société Française des Microscopies, Jun 2015, Nice, France
hal-01763638v1  Conference papers
Alain ClaverieVictor BoureauMartin HÿtchNikolay Cherkashin. Strain imaging of processed layers and devices by dark field electron holography
Congress of the Electron Microscopy Society of India, Jul 2014, ??, India
hal-01742015v1  Journal articles
A. GouyeFlorian HüeA. HalimaouiO. KermarrecY. Campidelli et al.  Selective growth of tensily strained Si1−yCy films on patterned Si substrates
Materials Science in Semiconductor Processing, Elsevier, 2009, 12 (1-2), pp.34 - 39. ⟨10.1016/j.mssp.2009.07.006⟩
hal-01736026v1  Book sections
Martin HÿtchFlorent HoudellierNikolay CherkashinShay RebohElsa Javon et al.  Dark-Field Electron Holography for Strain Mapping
Alain Claverie; Mireille Mouis. Transmission Electron Microscopy in Micro-Nanoelectronics, Wiley-Blackwell, pp.81--106, 2013, ⟨10.1002/9781118579022.ch4⟩
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hal-01742002v1  Journal articles
D. CammilleriV. YamF. FossardC. RenardD. Bouchier et al.  Lateral epitaxial growth of germanium on silicon oxide
Applied Physics Letters, American Institute of Physics, 2008, 93 (4), pp.43110 - 43110. ⟨10.1063/1.2963363⟩