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hal-01910554v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe the III-V on Si growth by Molecular Beam Epitaxy
20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Th-C1-3(S)
hal-02048639v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A universal mechanism to describe III-V epitaxy on Si
20th European Molecular Beam Epitaxy Workshop (Euro-MBE 2019), Feb 2019, Lenggries, Germany
hal-01910535v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  A general III-V/Si growth process description
European Materials Research Society - Spring Meeting 2018 (E-MRS 2018 Spring Meeting), Jun 2018, Strasbourg, France
hal-01910543v1  Conference papers
Ida LucciSimon CharbonnierLaurent PedesseauMaxime ValletLaurent Cerutti et al.  III-V/Si heterogeneous growth : thermodynamics and antiphase domains formation
34th International Conference on the Physics of Semiconductors (ICPS 2018), Jul 2018, Montpellier, France
hal-00486160v1  Conference papers
Anne PonchetNicolas BertruAlain Le Corre. Transmission electron microscopy observation of InAs quantum dots grown on (100) and (113)B InP
International workshop on long wavelength quantum dots, Jul 2007, Rennes, France
hal-00486707v1  Conference papers
Georges EliasAntoine LétoublonPhilippe CaroffIbrahim AlghoraibiNicolas Bertru et al.  Study of InAs/InP(311)B stacked quantum dots for laser emission at 1.55 µm
LWQD, International SANDIE Workshop on Long Wave Length Quantum Dots : Growth and Application, Jul 2007, Rennes, France. pp.G. Elias
hal-00485660v1  Conference papers
Nicolas BertruCyril ParanthoenOlivier DehaeseHervé FolliotAlain Le Corre et al.  QD laser on InP substrate for 1.55 µm emission and beyond
SPIE Photonics West - OPTO 2010, Jan 2010, San Francisco, United States. pp.76081B, ⟨10.1117/12.848398⟩
hal-00809031v1  Conference papers
Yu ZhaoNicolas BertruHervé FolliotMathieu PerrinS. Boyer-Richard et al.  Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayers
International Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
hal-00489868v1  Journal articles
Wei LuTony RohelNicolas BertruHervé FolliotCyril Paranthoen et al.  Achievement of InSb Quantum Dots on InP(100) Substrates
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. ⟨10.1143/JJAP.49.060210⟩
hal-00654285v1  Conference papers
C. CornetCédric RobertThanh Tra NguyenWeiming GuoAlexandre Bondi et al.  Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
hal-00788544v1  Conference papers
Olivier DurandSamy AlmosniCédric RobertThanh Tra NguyenC. Cornet et al.  Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells
Journées nationales du photovoltaïque JNPV2012, 2012, Chantilly, France
hal-00788526v1  Conference papers
Thanh Tra NguyenCédric RobertC. CornetWeiming GuoAntoine Létoublon et al.  coherent integration of photonics on silicon through the growth of GaP/Si
Technical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
hal-00788396v1  Journal articles
Thanh Tra NguyenCédric RobertAntoine LétoublonC. CornetThomas Quinci et al.  Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers
Thin Solid Films, Elsevier, 2013, Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III, 541, pp.36-40. ⟨10.1016/j.tsf.2012.11.116⟩
hal-00918735v1  Conference papers
Samy AlmosniC. CornetThomas QuinciThanh Tra NguyenJithesh Kuyyalil et al.  UHVCVD-MBE growth cluster for III-N-V/Si solar cells
Compound semiconductors week, ISCS, 2013, May 2013, Kobe, Japan
hal-01497220v1  Conference papers
Yanping WangAntoine LétoublonThanh Tra NguyenG. PatriarcheAnne Ponchet et al.  Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonics
European Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
hal-01833206v1  Journal articles
Ida LucciSimon CharbonnierLaurent PedesseauM. ValletLaurent Cerutti et al.  Universal description of III-V/Si epitaxial growth processes
Physical Review Materials, American Physical Society, 2018, 2 (6), pp.060401(R). ⟨10.1103/PhysRevMaterials.2.060401⟩
hal-01114912v1  Conference papers
Olivier DurandYanping WangSamy AlmosniMounib BahriJulien Stodolna et al.  Thorough structural and optical analyses of GaP-based heterostructures monolithically grown on silicon substrates for photonics on Si applications: toward the laser on silicon and high efficiency photovoltaics on silicon
6th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2014, Bucharest, Romania
hal-01115278v1  Conference papers
Yanping WangJulien StodolnaThanh Tra NguyenAntoine LétoublonJithesh Kuyyalil et al.  Abrupt heterointerface and low defect density in GaP/Si nanolayers
Compound Semiconductor Week 2014, May 2014, Montpellier, France
hal-01114877v1  Conference papers
Cédric RobertC. CornetThanh Tra NguyenM. NestoklonKatiane Pereira da Silva et al.  Composition dependent nature of the fundamental optical transition in (In,Ga)As/GaP quantum dots
26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. pp.Th-B1-2, ⟨10.1109/ICIPRM.2014.6880555⟩