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hal-02377367v1  Conference papers
Cédric MasanteJulien PernotJuliette LetellierDavid EonNicolas Rouger. 175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
hal-01590470v1  Conference papers
Gauthier ChicotDavid EonNicolas Rouger. Operating temperature as a trade-off parameter for designing drift region of diamond power devices
28th International Conference on Diamond and Carbon Materials, Sep 2017, Göteborg, Sweden
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hal-02157332v1  Conference papers
Bau PlinioMarc CousineauBernardo CogoFrédéric RichardeauVinnac Sébastien et al.  Sub-nanosecond delay CMOS Active Gate Driver for Closed-Loop dv/dt Control of GaN Transistors
31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. ⟨10.1109/ispsd.2019.8757693⟩
hal-01590457v1  Conference papers
Nicolas RougerThanh-Toan PhamGaetan PerezMasante CédricPierre Lefranc et al.  Diamond Devices for Power Electronics
11th Conference on New Diamond and Nano Carbons, May 2017, Cairns, Australia
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hal-02980827v1  Conference papers
Yazan BaraziFrançois BoigeNicolas RougerJean-Marc BlaquièreFrédéric Richardeau. ‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩
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hal-02920189v1  Conference papers
Yazan BaraziNicolas RougerFrédéric Richardeau. CMOS Gate Driver with fast short circuit protection for SiC MOSFETs
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual), Austria. pp.94-97, ⟨10.1109/ISPSD46842.2020.9170164⟩
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hal-02920129v1  Conference papers
Nicolas RougerYazan BaraziMarc CousineauFrédéric Richardeau. Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna (virtual ), Austria. pp.278-281, ⟨10.1109/ISPSD46842.2020.9170181⟩
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hal-02962708v1  Journal articles
Plinio BauMarc CousineauBernardo CougoFrédéric RichardeauNicolas Rouger. CMOS Active Gate Driver for Closed-Loop d v /d t Control of GaN Transistors
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2020, 35 (12), pp.13322-13332. ⟨10.1109/TPEL.2020.2995531⟩
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hal-02920181v1  Conference papers
Plinio BauMarc CousineauBernardo CougoFrédéric RichardeauNicolas Rouger. Modeling and Design of High Bandwidth Feedback Loop for dv/dt Control in CMOS AGD for GaN
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.106-109, ⟨10.1109/ISPSD46842.2020.9170106⟩
hal-01743621v1  Conference papers
Jean-Christophe CrébierVan-Sang NguyenNicolas RougerXavier SaboretPierre Lefranc et al.  Double chips low side - high side configurable full gate driver circuits for a high speed inverter leg
CIPS 2018 10th International Conference on Integrated Power Electronics Systems, 2018, Mar 2018, Stuttgart, Germany
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hal-02981846v1  Conference papers
Gaetan PerezJuliette LetellierAurélien MaréchalDavid EonGauthier Chicot et al.  Diodes Schottky en Diamant : augmentation du calibre en courant et parallélisation
Symposium de Génie Electrique, Université de Lorraine [UL], Jul 2018, Nancy, France