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hal-01736089v1  Journal articles
W. LerchS. PaulJ. NiessFuccio CristianoY. Lamrani et al.  Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions
Journal of The Electrochemical Society, Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩
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hal-01736054v1  Journal articles
S. KoffelNikolay CherkashinFlorent HoudellierMartin HÿtchGérard Benassayag et al.  End of range defects in Ge
Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
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hal-01736021v1  Journal articles
Shay RebohJ.F. BarbotMaxime ValletM.F. BeaufortFrançois Rieutord et al.  Nanoscale organization by elastic interactions between H and He platelets in Si
Journal of Applied Physics, American Institute of Physics, 2013, 114 (7), pp.073517. ⟨10.1063/1.4818812⟩
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hal-01736048v1  Journal articles
Shay RebohF. SchaurichA. DeclemyJ.F. BarbotM.F. Beaufort et al.  On the microstructure of Si coimplanted with H+ and He + ions at moderate energies
Journal of Applied Physics, American Institute of Physics, 2010, 108 (2), pp.023502. ⟨10.1063/1.3459884⟩
hal-01763083v1  Conference papers
Nikolay CherkashinNabil DaghboujAlain Claverie. Sequential He++H+ ion implantation in silicon: factors affecting blistering”
4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India