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hal-01736030v1  Journal articles
V.M. UstinovA.F. TsatsulnikovV.V. LundinA.V. SakharovA.E. Nikolaev et al.  Monolithic white LEDs: Approaches, technology, design
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Springer Verlag, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩
tel-01800161v1  Habilitation à diriger des recherches
Obtention DeNikolay Cherkashin. Précipitation sous contrainte dans les semiconducteurs
Science des matériaux [cond-mat.mtrl-sci]. Univesité Toulouse III- Paul Sabatier; Ecole doctorale Sciences de la matière; Section CNU Milieux denses et matériaux, 2017
hal-01736041v1  Conference papers
A.V. SakharovW.V. LundinE.E. ZavarinM.A. SinitsynS.O. Usov et al.  Optoelectronic structures with InAlN layers grown by MOVPE
30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
hal-01736043v1  Conference papers
A.F. TsatsulnikovW.V. LundinA.V. SakharovE.E. ZavarinS.O. Usov et al.  Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs
PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
hal-01736075v1  Conference papers
S. PersonnicA. TauzinK.K. BourdelleF. LetertreN. Kernevez et al.  Time dependence study of hydrogen-induced defects in silicon during thermal anneals
16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩
hal-01736054v1  Journal articles
S. KoffelNikolay CherkashinFlorent HoudellierMartin HÿtchGérard Benassayag et al.  End of range defects in Ge
Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
hal-01736016v1  Conference papers
N.N. LedentsovV.A. ShchukinY.M. ShernyakovM.M. KulaginaA.S. Payusov et al.  Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates
SPIE LASE 2017, High-Power Diode Laser Technology XV, Jan 2017, San Francisco, United States. ⟨10.1117/12.2252957⟩
hal-01736057v1  Conference papers
Nikolay CherkashinA. GouyeFlorian HüeFlorent HoudellierMartin Hÿtch et al.  Determination of strain within Si1-yCy layers grown by CVD on a Si substrate
Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
hal-01736092v1  Conference papers
A.N. LarsenA. KanjilalJ.L. HansenP. GaidukP. Normand et al.  Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩
hal-01736100v1  Conference papers
W. LerchS. PaulJ. NiessFuccio CristianoY. Lamrani et al.  Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions
Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
hal-01736106v1  Conference papers
S. PaulW. LerchXavier HebrasNikolay CherkashinFuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
hal-01736117v1  Conference papers
V.M. UstinovNikolay CherkashinN.A. BertA.F. Tsatsul'NikovA.R. Kovsh et al.  High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source
Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications, 2001, Boston, United States. pp.35-40, ⟨10.1557/PROC-692-H1.10.1⟩