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	1 2 3 4 5 6 Suivant Dernière	Relevance Author A→Z Author Z→A Title A→Z Title Z→A Date de publication croissante Date de publication décroissante Date de dépôt croissante Date de dépôt décroissante 30 results per page 50 results per page 100 results per page Merci d'indiquer la raison de votre demande o Export XML-TEI BibTeX EndNote CSV PDF RTF Advanced export... Syndicated feeds RSS ATOM
	hal-01736030v1 Journal articles V.M. Ustinov, A.F. Tsatsulnikov, V.V. Lundin, A.V. Sakharov, A.E. Nikolaev et al. Monolithic white LEDs: Approaches, technology, design Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Springer Verlag, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩
	hal-01736086v1 Journal articles Y. Bogumilowicz, J.M. Hartmann, F. Laugier, G. Rolland, T. Billon et al. High germanium content SiGe virtual substrates grown at high temperatures Journal of Crystal Growth, Elsevier, 2005, 283 (3-4), pp.346--355. ⟨10.1016/j.jcrysgro.2005.06.036⟩
	hal-01736042v1 Journal articles W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, E.E. Zavarin, G.A. Valkovskiy et al. Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice Journal of Crystal Growth, Elsevier, 2011, 315 (1), pp.267--271. ⟨10.1016/j.jcrysgro.2010.09.043⟩
	hal-01659180v1 Journal articles Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro et al. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩
	tel-01800161v1 Habilitation à diriger des recherches Obtention De, Nikolay Cherkashin. Précipitation sous contrainte dans les semiconducteurs Science des matériaux [cond-mat.mtrl-sci]. Univesité Toulouse III- Paul Sabatier; Ecole doctorale Sciences de la matière; Section CNU Milieux denses et matériaux, 2017
	hal-01763074v1 Conference papers Nikolay Cherkashin, Martin Hÿtch, M Korytov, Daniele Barettin, A. V. Sakharov et al. MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia
	hal-01736046v1 Journal articles J.M. Hartmann, M. Py, P.H. Morel, T. Ernst, B. Prévitali et al. Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs ECS Transactions, Electrochemical Society, Inc., 2010, 33 (6), pp.391-407. ⟨10.1149/1.3487570⟩
	hal-01736041v1 Conference papers A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, S.O. Usov et al. Optoelectronic structures with InAlN layers grown by MOVPE 30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩
	hal-01736043v1 Conference papers A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov et al. Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩
	hal-01736075v1 Conference papers S. Personnic, A. Tauzin, K.K. Bourdelle, F. Letertre, N. Kernevez et al. Time dependence study of hydrogen-induced defects in silicon during thermal anneals 16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩
	hal-01316731v1 Journal articles Charles Renard, Timothée Molière, Nikolay Cherkashin, J Alvarez, Laetitia Vincent et al. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed Scientific Reports, Nature Publishing Group, 2016, 6, pp.25328. ⟨10.1038/srep25328⟩
	hal-01736059v1 Journal articles P. Nguyen, K.K. Bourdelle, C. Aulnette, F. Lallement, N. Daix et al. Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩
	hal-01736067v1 Journal articles Nikolay Cherkashin, Alain Claverie, Caroline Bonafos, V.V. Chaldyshev, N.A. Bert et al. Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism Journal of Applied Physics, American Institute of Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩
	hal-02096562v1 Journal articles Nikolay Bert, Vladimir Chaldyshev, Nikolay Cherkashin, Vladimir Nevedomskiy, Valery Preobrazhenskii et al. Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial Journal of Applied Physics, American Institute of Physics, 2019, 125 (14), pp.145106. ⟨10.1063/1.5048076⟩
	hal-01736054v1 Journal articles S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag et al. End of range defects in Ge Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
	hal-01736018v1 Journal articles N.N. Ledentsov, V.A. Shchukin, Y.M. Shernyakov, M.M. Kulagina, A.S. Payusov et al. (In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range Semiconductor Science and Technology, IOP Publishing, 2017, 32 (2), ⟨10.1088/1361-6641/aa5144⟩
	hal-01736056v1 Journal articles J M Hartmann, A Abbadie, Nikolay Cherkashin, H Grampeix, L Clavelier. Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si Semiconductor Science and Technology, IOP Publishing, 2009, 24 (5), pp.055002. ⟨10.1088/0268-1242/24/5/055002⟩
	hal-01736014v1 Journal articles Nikolay Cherkashin, Nabil Daghbouj, Grégory Seine, Alain Claverie. Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩
	hal-01736053v1 Journal articles P. Tsouroutas, D. Tsoukalas, I. Zergioti, Nikolay Cherkashin, Alain Claverie. Modeling and experiments on diffusion and activation of phosphorus in germanium Journal of Applied Physics, American Institute of Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩
	hal-01736095v1 Journal articles A. Wellner, Vincent Paillard, H. Coffin, Nikolay Cherkashin, Caroline Bonafos. Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate Journal of Applied Physics, American Institute of Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩
	hal-01736016v1 Conference papers N.N. Ledentsov, V.A. Shchukin, Y.M. Shernyakov, M.M. Kulagina, A.S. Payusov et al. Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates SPIE LASE 2017, High-Power Diode Laser Technology XV, Jan 2017, San Francisco, United States. ⟨10.1117/12.2252957⟩
	hal-01736019v1 Conference papers N.N. Ledentsov, V.A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Nikolay Cherkashin et al. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces SPIE OPTO 2015, Feb 2015, San Francisco, United States. ⟨10.1117/12.2083953⟩
	hal-01736051v1 Conference papers Alain Claverie, Nikolay Cherkashin, Florian Hüe, Shay Reboh, Florent Houdellier et al. Strain Mapping of Layers and Devices Using Electron Holography ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩
	hal-01736057v1 Conference papers Nikolay Cherkashin, A. Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch et al. Determination of strain within Si1-yCy layers grown by CVD on a Si substrate Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
	hal-01736065v1 Conference papers Nikolay Cherkashin, Adrien Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch et al. Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩
	hal-01736092v1 Conference papers A.N. Larsen, A. Kanjilal, J.L. Hansen, P. Gaiduk, P. Normand et al. Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩
	hal-01736099v1 Conference papers R. El Farhane, C. Laviron, Fuccio Cristiano, Nikolay Cherkashin, P. Morin et al. Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩
	hal-01736100v1 Conference papers W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani et al. Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
	hal-01736106v1 Conference papers S. Paul, W. Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
	hal-01736117v1 Conference papers V.M. Ustinov, Nikolay Cherkashin, N.A. Bert, A.F. Tsatsul'Nikov, A.R. Kovsh et al. High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications, 2001, Boston, United States. pp.35-40, ⟨10.1557/PROC-692-H1.10.1⟩
	1 2 3 4 5 6 Suivant Dernière	Relevance Author A→Z Author Z→A Title A→Z Title Z→A Date de publication croissante Date de publication décroissante Date de dépôt croissante Date de dépôt décroissante 30 results per page 50 results per page 100 results per page o Export XML-TEI BibTeX EndNote CSV PDF RTF Advanced export... Syndicated feeds RSS ATOM

hal-01736030v1 Journal articles
V.M. Ustinov, A.F. Tsatsulnikov, V.V. Lundin, A.V. Sakharov, A.E. Nikolaev et al. Monolithic white LEDs: Approaches, technology, design
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, Springer Verlag, 2012, 6 (3), pp.501-504. ⟨10.1134/S1027451012060237⟩

hal-01736086v1 Journal articles
Y. Bogumilowicz, J.M. Hartmann, F. Laugier, G. Rolland, T. Billon et al. High germanium content SiGe virtual substrates grown at high temperatures
Journal of Crystal Growth, Elsevier, 2005, 283 (3-4), pp.346--355. ⟨10.1016/j.jcrysgro.2005.06.036⟩

hal-01736042v1 Journal articles
W.V. Lundin, A.E. Nikolaev, A.V. Sakharov, E.E. Zavarin, G.A. Valkovskiy et al. Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice
Journal of Crystal Growth, Elsevier, 2011, 315 (1), pp.267--271. ⟨10.1016/j.jcrysgro.2010.09.043⟩

hal-01659180v1 Journal articles
Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro et al. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon
Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩

tel-01800161v1 Habilitation à diriger des recherches
Obtention De, Nikolay Cherkashin. Précipitation sous contrainte dans les semiconducteurs
Science des matériaux [cond-mat.mtrl-sci]. Univesité Toulouse III- Paul Sabatier; Ecole doctorale Sciences de la matière; Section CNU Milieux denses et matériaux, 2017

hal-01763074v1 Conference papers
Nikolay Cherkashin, Martin Hÿtch, M Korytov, Daniele Barettin, A. V. Sakharov et al. MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs
Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia

hal-01736046v1 Journal articles
J.M. Hartmann, M. Py, P.H. Morel, T. Ernst, B. Prévitali et al. Cyclic Deposition / Etch processes for the formation of Si raised sources and drains in advanced MOSFETs
ECS Transactions, Electrochemical Society, Inc., 2010, 33 (6), pp.391-407. ⟨10.1149/1.3487570⟩

hal-01736041v1 Conference papers
A.V. Sakharov, W.V. Lundin, E.E. Zavarin, M.A. Sinitsyn, S.O. Usov et al. Optoelectronic structures with InAlN layers grown by MOVPE
30th International Conference on the Physics of Semiconductors, Jul 2010, Séoul, South Korea. pp.107-108, ⟨10.1063/1.3666279⟩

hal-01736043v1 Conference papers
A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov et al. Deep green and monolithic white LEDs based on combination of short-period InGaN/GaN superlattice and InGaN QWs
PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, 2011, Seoul, France. pp.253-254, ⟨10.1063/1.3666350⟩

hal-01736075v1 Conference papers
S. Personnic, A. Tauzin, K.K. Bourdelle, F. Letertre, N. Kernevez et al. Time dependence study of hydrogen-induced defects in silicon during thermal anneals
16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩

hal-01316731v1 Journal articles
Charles Renard, Timothée Molière, Nikolay Cherkashin, J Alvarez, Laetitia Vincent et al. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
Scientific Reports, Nature Publishing Group, 2016, 6, pp.25328. ⟨10.1038/srep25328⟩

hal-01736059v1 Journal articles
P. Nguyen, K.K. Bourdelle, C. Aulnette, F. Lallement, N. Daix et al. Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H
Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩

hal-01736067v1 Journal articles
Nikolay Cherkashin, Alain Claverie, Caroline Bonafos, V.V. Chaldyshev, N.A. Bert et al. Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism
Journal of Applied Physics, American Institute of Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩

hal-02096562v1 Journal articles
Nikolay Bert, Vladimir Chaldyshev, Nikolay Cherkashin, Vladimir Nevedomskiy, Valery Preobrazhenskii et al. Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial
Journal of Applied Physics, American Institute of Physics, 2019, 125 (14), pp.145106. ⟨10.1063/1.5048076⟩

hal-01736054v1 Journal articles
S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag et al. End of range defects in Ge
Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩

hal-01736018v1 Journal articles
N.N. Ledentsov, V.A. Shchukin, Y.M. Shernyakov, M.M. Kulagina, A.S. Payusov et al. (In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range
Semiconductor Science and Technology, IOP Publishing, 2017, 32 (2), ⟨10.1088/1361-6641/aa5144⟩

hal-01736056v1 Journal articles
J M Hartmann, A Abbadie, Nikolay Cherkashin, H Grampeix, L Clavelier. Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1)\mathsemicolon Ge surface passivation by Si
Semiconductor Science and Technology, IOP Publishing, 2009, 24 (5), pp.055002. ⟨10.1088/0268-1242/24/5/055002⟩

hal-01736014v1 Journal articles
Nikolay Cherkashin, Nabil Daghbouj, Grégory Seine, Alain Claverie. Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩

hal-01736053v1 Journal articles
P. Tsouroutas, D. Tsoukalas, I. Zergioti, Nikolay Cherkashin, Alain Claverie. Modeling and experiments on diffusion and activation of phosphorus in germanium
Journal of Applied Physics, American Institute of Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩

hal-01736095v1 Journal articles
A. Wellner, Vincent Paillard, H. Coffin, Nikolay Cherkashin, Caroline Bonafos. Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate
Journal of Applied Physics, American Institute of Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩

hal-01736016v1 Conference papers
N.N. Ledentsov, V.A. Shchukin, Y.M. Shernyakov, M.M. Kulagina, A.S. Payusov et al. Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates
SPIE LASE 2017, High-Power Diode Laser Technology XV, Jan 2017, San Francisco, United States. ⟨10.1117/12.2252957⟩

hal-01736019v1 Conference papers
N.N. Ledentsov, V.A. Shchukin, J. Lyytikäinen, O. Okhotnikov, Nikolay Cherkashin et al. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces
SPIE OPTO 2015, Feb 2015, San Francisco, United States. ⟨10.1117/12.2083953⟩

hal-01736051v1 Conference papers
Alain Claverie, Nikolay Cherkashin, Florian Hüe, Shay Reboh, Florent Houdellier et al. Strain Mapping of Layers and Devices Using Electron Holography
ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩

hal-01736057v1 Conference papers
Nikolay Cherkashin, A. Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch et al. Determination of strain within Si1-yCy layers grown by CVD on a Si substrate
Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩

hal-01736065v1 Conference papers
Nikolay Cherkashin, Adrien Gouye, Florian Hüe, Florent Houdellier, Martin Hÿtch et al. Critical Analysis of Different Techniques for Measuring Strain in Si1-yCy Layers Grown by CVD on a Si Substrate
ECS Transactions, May 2008, Unknown, Unknown Region. ⟨10.1149/1.2911510⟩

hal-01736092v1 Conference papers
A.N. Larsen, A. Kanjilal, J.L. Hansen, P. Gaiduk, P. Normand et al. Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩

hal-01736099v1 Conference papers
R. El Farhane, C. Laviron, Fuccio Cristiano, Nikolay Cherkashin, P. Morin et al. Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩

hal-01736100v1 Conference papers
W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani et al. Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions
Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105

hal-01736106v1 Conference papers
S. Paul, W. Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩

hal-01736117v1 Conference papers
V.M. Ustinov, Nikolay Cherkashin, N.A. Bert, A.F. Tsatsul'Nikov, A.R. Kovsh et al. High luminescence efficiency from GaAsN layers grown by MBE with RF nitrogen plasma source
Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications, 2001, Boston, United States. pp.35-40, ⟨10.1557/PROC-692-H1.10.1⟩

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