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	1 2 3 4 5 6	Sort  Relevance  Author A→Z  Author Z→A  Title A→Z  Title Z→A  Date de publication croissante  Date de publication décroissante  Date de dépôt croissante  Date de dépôt décroissante Number 30 results per page 50 results per page 100 results per page × Merci d'indiquer la raison de votre demande Annuler Envoyer la demande  Tools  o  Export XML-TEI BibTeX EndNote CSV PDF RTF  Advanced export...  Syndicated feeds RSS ATOM
	hal-01736089v1  Journal articles W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani et al.  Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions Journal of The Electrochemical Society, Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩
	hal-01736090v1  Journal articles Nikolay Cherkashin, Caroline Bonafos, H. Coffin, Marzia Carrada, Sylvie Schamm-Chardon et al.  Fabrication of nanocrystal memories by ultra low energy ion implantation physica status solidi (c), Wiley, 2005, 2 (6), pp.1907--1911. ⟨10.1002/pssc.200460523⟩
	hal-01721151v1  Journal articles Andrei F. Tsatsulnikov, Wsevolod V. Lundin, Alexei V. Sakharov, Andrey E. Nikolaev, E.E. Zavarin et al.  Formation of three-dimensional islands in the active region of InGaN based light emitting diodes using a growth interruption approach Science of advanced materials, American Scientific Publishers, 2015, 7 (8), pp.1629-1635. ⟨10.1166/sam.2015.2277⟩
	hal-02304422v1  Conference papers Nikolay Cherkashin. Quantitative strain distribution in electromechanically coupled IV-IV and III-V semiconductor quantum dots MGCTF 2019, Jul 2019, Saint Petersbourg, Russia
	hal-02344131v1  Poster communications Jean-Paul Kleider, Denis Mencaraglia, Charles Renard, J.P. Connolly, Nikolay Cherkashin et al.  Building blocks development for defect-free growth of GaAs on silicon for tandem solar cells JNPV 2019, Dec 2019, Dourdan, France
	hal-01736058v1  Journal articles S. Personnic, K.K. Bourdelle, F. Letertre, A. Tauzin, Nikolay Cherkashin et al.  Impact of the transient formation of molecular hydrogen on the microcrack nucleation and evolution in H-implanted Si (001) Journal of Applied Physics, American Institute of Physics, 2008, 103 (2), pp.23508-1 - 23508-9. ⟨10.1063/1.2829807⟩
	hal-01719485v1  Journal articles Nabil Daghbouj, Nikolay Cherkashin, François-Xavier Darras, Vincent Paillard, M. Fnaiech et al.  Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon Journal of Applied Physics, American Institute of Physics, 2016, 119 (13), pp.135308 - 245301. ⟨10.1063/1.4945032⟩
	hal-01736053v1  Journal articles P. Tsouroutas, D. Tsoukalas, I. Zergioti, Nikolay Cherkashin, Alain Claverie. Modeling and experiments on diffusion and activation of phosphorus in germanium Journal of Applied Physics, American Institute of Physics, 2009, 105 (9), pp.094910. ⟨10.1063/1.3117485⟩
	hal-01736054v1  Journal articles S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag et al.  End of range defects in Ge Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. ⟨10.1063/1.3153985⟩
	hal-01736021v1  Journal articles Shay Reboh, J.F. Barbot, Maxime Vallet, M.F. Beaufort, François Rieutord et al.  Nanoscale organization by elastic interactions between H and He platelets in Si Journal of Applied Physics, American Institute of Physics, 2013, 114 (7), pp.073517. ⟨10.1063/1.4818812⟩
	hal-01745004v1  Journal articles F. Stumpf, A. A. Abu Quba, P. Singer, M. Rumler, Nikolay Cherkashin et al.  Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy Journal of Applied Physics, American Institute of Physics, 2018, 123 (12), pp.125104. ⟨10.1063/1.5022558⟩
	hal-01736014v1  Journal articles Nikolay Cherkashin, Nabil Daghbouj, Grégory Seine, Alain Claverie. Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161556 - 161559. ⟨10.1063/1.5012505⟩
	hal-01736103v1  Journal articles Caroline Bonafos, Marzia Carrada, Nikolay Cherkashin, H. Coffin, D. Chassaing et al.  Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation Journal of Applied Physics, American Institute of Physics, 2004, 95 (10), pp.5696-5702. ⟨10.1063/1.1695594⟩
	hal-01736059v1  Journal articles P. Nguyen, K.K. Bourdelle, C. Aulnette, F. Lallement, N. Daix et al.  Splitting kinetics of Si$_{0.8}$Ge$_{0.2}$ layers implanted with H or sequentially with He and H Journal of Applied Physics, American Institute of Physics, 2008, 104, pp.113526. ⟨10.1063/1.3033555⟩
	hal-01719496v1  Journal articles Nikolay Cherkashin, Nabil Daghbouj, François-Xavier Darras, M. Fnaiech, Alain Claverie. Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy Journal of Applied Physics, American Institute of Physics, 2015, 118 (24), pp.245301 - 135308. ⟨10.1063/1.4938108⟩
	hal-01736074v1  Journal articles H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag et al.  Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers Journal of Applied Physics, American Institute of Physics, 2006, 99 (4), pp.044302. ⟨10.1063/1.2171785⟩
	hal-01736067v1  Journal articles Nikolay Cherkashin, Alain Claverie, Caroline Bonafos, V.V. Chaldyshev, N.A. Bert et al.  Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism Journal of Applied Physics, American Institute of Physics, 2007, 102 (2), pp.023520. ⟨10.1063/1.2749303⟩
	hal-01721149v1  Journal articles Konstantinos Pantzas, Gilles Patriarche, David Troadec, Mathieu Kociak, Nikolay Cherkashin et al.  Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys Journal of Applied Physics, American Institute of Physics, 2015, 117 (5), pp.55705. ⟨10.1063/1.4907210⟩
	hal-02096562v1  Journal articles Nikolay Bert, Vladimir Chaldyshev, Nikolay Cherkashin, Vladimir Nevedomskiy, Valery Preobrazhenskii et al.  Metallic AsSb nanoinclusions strongly enriched by Sb in AlGaAsSb metamaterial Journal of Applied Physics, American Institute of Physics, 2019, 125 (14), pp.145106. ⟨10.1063/1.5048076⟩
	hal-01736095v1  Journal articles A. Wellner, Vincent Paillard, H. Coffin, Nikolay Cherkashin, Caroline Bonafos. Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate Journal of Applied Physics, American Institute of Physics, 2004, 96 (4), pp.2403-2405. ⟨10.1063/1.1765853⟩
	hal-01721159v1  Journal articles Viktor S. Kopp, Vladimir M. Kaganer, Marina V. Baidakova, Wsevolod V. Lundin, Andrey E. Nikolaev et al.  X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy Journal of Applied Physics, American Institute of Physics, 2014, 115 (7), pp.073507. ⟨10.1063/1.4865502⟩
	hal-01736048v1  Journal articles Shay Reboh, F. Schaurich, A. Declemy, J.F. Barbot, M.F. Beaufort et al.  On the microstructure of Si coimplanted with H+ and He + ions at moderate energies Journal of Applied Physics, American Institute of Physics, 2010, 108 (2), pp.023502. ⟨10.1063/1.3459884⟩
	hal-01767500v1  Conference papers Alain Claverie, Nikolay Cherkashin. New developments of the SmartCut process for slicing thin layers EMN Conference, May 2018, Héraklion, Greece
	hal-01767536v1  Conference papers Nikolay Cherkashin. Advanced methods for strain measurements in crystalline materials by transmission electron microscopy”, Nanostructures: Physics and Technology 26th Intern. Symposium, Jun 2018, Minsk, Belarus
	hal-01719497v1  Journal articles Larbi Laânab, Amine Belafhaili, Fuccio Cristiano, Nikolay Cherkashin, Alain Claverie. The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys physica status solidi (c), Wiley, 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩
	hal-01719486v1  Journal articles Nikolay Cherkashin, François-Xavier Darras, Alain Claverie. Determination of the free gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing Solid State Phenomena, 2016, 242, pp.190-195. ⟨10.4028/www.scientific.net/SSP.242.190⟩
	hal-01763074v1  Conference papers Nikolay Cherkashin, Martin Hÿtch, M Korytov, Daniele Barettin, A. V. Sakharov et al.  MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia
	hal-01763087v1  Conference papers Nikolay Cherkashin. Strain measurements and mapping with a nanometer resolution and high precision at the most basic conventional TEM: moiré based technique by specimen design Energy Materials Nanotechnology (EMN 2018), May 2018, Heraklion, Greece
	hal-01763083v1  Conference papers Nikolay Cherkashin, Nabil Daghbouj, Alain Claverie. Sequential He++H+ ion implantation in silicon: factors affecting blistering” 4th International Conference On Nano Structuring by Ion Beam (ICNIB 2017), Oct 2017, Indore, India
	hal-01763096v1  Conference papers Alain Claverie, Nabil Daghbouj, Nikolay Cherkashin. Blistering of silicon surfaces due to very low energy H and He co-implantation EMN Conference, May 2016, Dubrovnic, Croatia
	1 2 3 4 5 6	Sort  Relevance  Author A→Z  Author Z→A  Title A→Z  Title Z→A  Date de publication croissante  Date de publication décroissante  Date de dépôt croissante  Date de dépôt décroissante Number 30 results per page 50 results per page 100 results per page  Tools  o  Export XML-TEI BibTeX EndNote CSV PDF RTF  Advanced export...  Syndicated feeds RSS ATOM