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hal-01955720v1  Conference papers
Saleem HamadyFrédéric MoranchoBilal BeydounPatrick AustinMathieu Gavelle. Normally-Off AlGaN/GaN HEMT using fluorine implantation below the channel
Symposium en Génie Electrique 2014 (SGE 2014), Jul 2014, Cachan, France
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hal-01005674v1  Conference papers
Loïc ThéolierKarine IsoirdHenri TranducFrédéric MoranchoJaume Roig Guitart et al.  Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs
8th International Seminar on Power Semiconductors (ISPS'06, Aug 2006, Pragues, Czech Republic. pp.117-122
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hal-01108922v1  Conference papers
Saleem HamadyFrédéric MoranchoBilal BeydounPatrick AustinMathieu Gavelle. P-doped region below the AlGaN/GaN interface for normally-off HEMT
16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe, Aug 2014, Lappeenranta, Finland. pp.1 - 8, ⟨10.1109/EPE.2014.6910769⟩
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hal-01480996v1  Journal articles
Andréa NicolletGuillaume LahinerAndres BelisarioSandrine Assié-SouleilleMehdi Djafari-Rouhani et al.  Investigation of Al/CuO multilayered thermite ignition
Journal of Applied Physics, American Institute of Physics, 2017, 121 (3), pp.34503 - 34503. ⟨10.1063/1.4974288⟩
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hal-01004508v1  Conference papers
Gaëtan ToulonIgnacio CortesFrédéric MoranchoAbdelhakim BourennaneKarine Isoird. Analysis and optimization of a novel high voltage striped STI-LDMOS transistor on SOI CMOS technology
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. pp.122-128
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hal-01002262v1  Conference papers
Loïc ThéolierHicham Mahfoz-KotbKarine IsoirdFrédéric Morancho. Étude paramétrique des performances statiques du transistor DT-SJMOS 1200 V
XIIème colloque Electronique de Puissance du Futur (EPF 2008), Jul 2008, TOURS, France. 4 p
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hal-01005655v1  Conference papers
Stéphane AlvesFrédéric MoranchoJean Michel ReynesJ. MargheritaI. Deram et al.  Experimental validation of the "FLoating Island" concept: A 95 Volts Vertical breakdown voltage FLIDiode
7th International Seminar on Power Semiconductors (ISPS'04), Aug 2004, Pragues, Czech Republic. pp.47-50
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tel-00165581v1  Theses
Frédéric Morancho. Le transistor MOS de puissance à tranchées : modélisation et limites de performances
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 1996. Français
hal-01710524v1  Conference papers
Frédéric MoranchoSaleem HamadyBilal Beydoun. A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions
29th International Conference on Microelectronics (ICM 2017), Dec 2017, Beirut, Lebanon. ⟨10.1109/ICM.2017.8268868⟩
hal-01871427v1  Conference papers
Mathieu JolySandrine Assié-SouleilleLaurent MazenqMaurane MarletPierre Temple-Boyer et al.  Development of an ISFET-based analysis microsystem for nitrogen cycle monitoring in durum wheat crop Introduction
4th CIGR international conference of agriculture engineering, CIGR AgEng 2016, Jun 2016, Aarhus, Denmark. 12p
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hal-00994826v1  Conference papers
Saleem HamadyFrédéric MoranchoBilal BeydounPatrick AustinMathieu Gavelle. HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation
20th LAAS International Science Conference Advanced Research for Better Tomorrow, Mar 2014, Hadath, Lebanon
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hal-01002131v1  Conference papers
Stéphane AlvesFrédéric MoranchoJean Michel ReynesJ. MargheritaI. Deram et al.  Validation expérimentale du concept des "îlots flottants": réalisation d'une FLIdiodes verticale 95 volts
Seminario Annual de Automática, Electronica Industrial e Instrumentación Electronique de Puissance du Futur, Sep 2004, TOULOUSE, France. pp.4 PAGES