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hal-01719500v1  Journal articles
François-Xavier DarrasNikolay CherkashinFuccio CristianoEmmanuel ScheidOleg Kononchuk et al.  Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩