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hal-01481853v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJp RedoulesJb Renucci. RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS
Journal of Physics C: Solid State Physics, Institute of Physics (IOP), 1986, 19 (10), pp.1471-1479. ⟨10.1088/0022-3719/19/10/004⟩
hal-01481850v1  Journal articles
C FontaineH BenarfaEléna Bedel-PereiraA MunozyagueGeorges Landa et al.  MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES
Journal of Applied Physics, American Institute of Physics, 1986, 60 (1), pp.208-212. ⟨10.1063/1.337683⟩
hal-01481851v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJb RenucciJm Roquais et al.  CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY
Journal of Applied Physics, American Institute of Physics, 1986, 60 (6), pp.1980-1984. ⟨10.1063/1.337199⟩
hal-01481852v1  Journal articles
Georges LandaRobert CarlesJb RenucciC FontaineEléna Bedel-Pereira et al.  RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2
Journal of Applied Physics, American Institute of Physics, 1986, 60 (3), pp.1025-1031. ⟨10.1063/1.337392⟩
hal-01481844v1  Journal articles
A MunozyagueGeorges LandaRobert CarlesC FontaineEléna Bedel-Pereira. OPTICAL DETERMINATION OF STRAINS IN HETEROSTRUCTURES - GAAS/SI AS AN EXAMPLE
Journal of Applied Physics, American Institute of Physics, 1989, 66 (1), pp.196-200. ⟨10.1063/1.343904⟩
hal-00323461v1  Journal articles
N. BertruM. NouaouraJ. BonnetL. LassabatereEléna Bedel-Pereira et al.  Preparation of GaSb(100) surfaces by ultraviolet irradiation
Journal of Vacuum Science and Technology A, American Vacuum Society, 1997, 15 (4), pp.2043-2050. ⟨10.1116/1.580606⟩
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hal-00003590v1  Journal articles
Guillaume BachelierAdnen MlayahM. CazayousJesse GroenenAntoine Zwick et al.  Resonant Raman scattering in GaAsN: Mixing, localization and band impurity formation of electronic states
Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2003, 67, pp.205325
hal-00272556v1  Journal articles
T. BouragbaM. MihailovicH. CarrerePierre DisseixA. Vasson et al.  Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2004, 151 (5), pp.312. ⟨10.1049/ip-opt:20040929⟩
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hal-01922899v1  Journal articles
F. PancieraP FazziniM. ColletJ. BoucherEléna Bedel-Pereira et al.  End-of-range defects in germanium and their role in boron deactivation
Applied Physics Letters, American Institute of Physics, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩
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hal-00720226v1  Conference papers
Ana BeltranSylvie Schamm-ChardonVincent MortetEléna Bedel-PereiraFuccio Cristiano et al.  Compositional characterization of SiC-SiO2 interfaces in MOSFETs
15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p
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hal-01707035v1  Journal articles
Mathieu PalosseIsabelle SéguyEléna Bedel-PereiraChristina Villeneuve-FaureCharlotte Mallet et al.  Spin transport in benzofurane bithiophene based organic spin valves
AIP Advances, American Institute of Physics- AIP Publishing LLC, 2014, 4 (1), pp.017117. ⟨10.1063/1.4862675⟩
hal-01921825v1  Journal articles
Giuseppe FisicaroLourdes PelazMaria AboyPedro LopezMarkus Italia et al.  Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
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hal-01993226v1  Conference papers
Benoit DugrenilIsabelle SéguyH. LeeThierry CampsY.-C. Lin et al.  AZO electrodes deposited by atomic layer deposition for OLED fabrication
SPIE Photonics Europe, Apr 2014, Brussels, Belgium. pp.91371D
hal-01721156v1  Conference papers
Fuccio CristianoY. QiuEléna Bedel-PereiraKarim HuetFulvio Mazzamuto et al.  Extended defects in ion-implanted si during nanosecond laser annealing
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩