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hal-01735436v1  Conference papers
Richard DaubriacEmmanuel ScheidS. JoblotR. BeneytonP Acosta Alba et al.  Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
hal-01921215v1  Journal articles
Luis MarquesMaría AboyIván SantosPedro LópezFuccio Cristiano et al.  Ultrafast Generation of Unconventional { 001 } Loops in Si
Physical Review Letters, American Physical Society, 2017, 119 (20), pp.205503. ⟨10.1103/physrevlett.119.205503⟩
hal-01343978v3  Conference papers
Richard MonflierToshiyuki TabataFuccio CristianoInès Toque-TresonneFulvio Mazzamuto et al.  Defect investigation of excimer laser annealed silicon
IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France
hal-01921394v1  Journal articles
Maryam ShayestehDan ConnellFarzan GityPhilip Murphy-ArmandoRan Yu et al.  Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩
tel-00919958v1  Habilitation à diriger des recherches
Fuccio Cristiano. Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties
Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013
hal-01921897v1  Journal articles
S. BoninelliG. ImpellizzeriA. AlbertiF. PrioloFuccio Cristiano et al.  Role of the Ge surface during the end of range dissolution
Applied Physics Letters, American Institute of Physics, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩
hal-00720226v1  Conference papers
Ana BeltranSylvie Schamm-ChardonVincent MortetEléna Bedel-PereiraFuccio Cristiano et al.  Compositional characterization of SiC-SiO2 interfaces in MOSFETs
15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p
hal-01922903v1  Journal articles
Sébastien DuguayT. PhilippeFuccio CristianoDidier Blavette. Direct imaging of boron segregation to extended defects in silicon
Applied Physics Letters, American Institute of Physics, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩
hal-01922899v1  Journal articles
F. PancieraP FazziniM. ColletJ. BoucherEléna Bedel-Pereira et al.  End-of-range defects in germanium and their role in boron deactivation
Applied Physics Letters, American Institute of Physics, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩
hal-01736061v1  Journal articles
S. BoninelliG. ImpellizzeriS. MirabellaF. PrioloE. Napolitani et al.  Formation and evolution of F nanobubbles in amorphous and crystalline Si
Applied Physics Letters, American Institute of Physics, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩
hal-01736115v1  Journal articles
Fuccio CristianoXavier HebrasNikolay CherkashinAlain ClaverieW. Lerch et al.  Clusters formation in ultralow-energy high-dose boron-implanted silicon
Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩