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hal-01719500v1  Journal articles
François-Xavier DarrasNikolay CherkashinFuccio CristianoEmmanuel ScheidOleg Kononchuk et al.  Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
hal-01730652v1  Conference papers
Richard DaubriacMahamoud Abou DaherFuccio CristanoEmmanuel ScheidS. Joblot et al.  Differential hall characterization of shallow strained SiGe layers
2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. ⟨10.1109/NMDC.2016.7777082⟩
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hal-01735436v1  Conference papers
Richard DaubriacEmmanuel ScheidS. JoblotR. BeneytonP Acosta Alba et al.  Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain