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hal-01719500v1  Journal articles
François-Xavier DarrasNikolay CherkashinFuccio CristianoEmmanuel ScheidOleg Kononchuk et al.  Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
hal-01736073v1  Journal articles
S. BoninelliNikolay CherkashinAlain ClaverieFuccio Cristiano. Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩
hal-01736079v1  Journal articles
Fuccio CristianoY. LamraniF. SeveracM. GavelleS. Boninelli et al.  Defects evolution and dopant activation anomalies in ion implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
hal-01736089v1  Journal articles
W. LerchS. PaulJ. NiessFuccio CristianoY. Lamrani et al.  Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions
Journal of The Electrochemical Society, Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩
hal-01736096v1  Journal articles
Fuccio CristianoNikolay CherkashinP. CalvoY. LamraniXavier Hebras et al.  Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
hal-01736098v1  Journal articles
P. CalvoAlain ClaverieNikolay CherkashinB. ColombeauY. Lamrani et al.  Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩
hal-01736101v1  Journal articles
Fuccio CristianoNikolay CherkashinXavier HebrasP. CalvoY. Lamrani et al.  Ion beam induced defects in crystalline silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
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hal-01736115v1  Journal articles
Fuccio CristianoXavier HebrasNikolay CherkashinAlain ClaverieW. Lerch et al.  Clusters formation in ultralow-energy high-dose boron-implanted silicon
Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩
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hal-01736061v1  Journal articles
S. BoninelliG. ImpellizzeriS. MirabellaF. PrioloE. Napolitani et al.  Formation and evolution of F nanobubbles in amorphous and crystalline Si
Applied Physics Letters, American Institute of Physics, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩
cea-01745394v1  Journal articles
Viktoryia UhnevionakAlexander BurenkovChristian StrengerGuillermo OrtizEléna Bedel-Pereira et al.  Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩
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hal-01921394v1  Journal articles
Maryam ShayestehDan ConnellFarzan GityPhilip Murphy-ArmandoRan Yu et al.  Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩
hal-01921825v1  Journal articles
Giuseppe FisicaroLourdes PelazMaria AboyPedro LopezMarkus Italia et al.  Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
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