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hal-00720226v1  Conference papers
Ana BeltranSylvie Schamm-ChardonVincent MortetEléna Bedel-PereiraFuccio Cristiano et al.  Compositional characterization of SiC-SiO2 interfaces in MOSFETs
15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p
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tel-00919958v1  Habilitation à diriger des recherches
Fuccio Cristiano. Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties
Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013
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hal-01343978v3  Conference papers
Richard MonflierToshiyuki TabataFuccio CristianoInès Toque-TresonneFulvio Mazzamuto et al.  Defect investigation of excimer laser annealed silicon
IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France
hal-01690886v1  Conference papers
Richard MonflierAmin BenyoucefMégane TurpinFuccio CristianoEléna Bedel-Pereira. Etude des défauts induits par recuit laser excimer sur silicium
20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p
hal-01719500v1  Journal articles
François-Xavier DarrasNikolay CherkashinFuccio CristianoEmmanuel ScheidOleg Kononchuk et al.  Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
hal-01721156v1  Conference papers
Fuccio CristianoY. QiuEléna Bedel-PereiraKarim HuetFulvio Mazzamuto et al.  Extended defects in ion-implanted si during nanosecond laser annealing
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
hal-01730659v1  Conference papers
L. PasiniP. BatudeJ. LacordM. CasséB. Mathieu et al.  High performance CMOS FDSOI devices activated at low temperature
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
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hal-01735436v1  Conference papers
Richard DaubriacEmmanuel ScheidS. JoblotR. BeneytonP Acosta Alba et al.  Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain
hal-01736073v1  Journal articles
S. BoninelliNikolay CherkashinAlain ClaverieFuccio Cristiano. Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩
hal-01736079v1  Journal articles
Fuccio CristianoY. LamraniF. SeveracM. GavelleS. Boninelli et al.  Defects evolution and dopant activation anomalies in ion implanted silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩
hal-01736089v1  Journal articles
W. LerchS. PaulJ. NiessFuccio CristianoY. Lamrani et al.  Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions
Journal of The Electrochemical Society, Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩
hal-01736096v1  Journal articles
Fuccio CristianoNikolay CherkashinP. CalvoY. LamraniXavier Hebras et al.  Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩
hal-01736098v1  Journal articles
P. CalvoAlain ClaverieNikolay CherkashinB. ColombeauY. Lamrani et al.  Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩
hal-01736101v1  Journal articles
Fuccio CristianoNikolay CherkashinXavier HebrasP. CalvoY. Lamrani et al.  Ion beam induced defects in crystalline silicon
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩
hal-01736100v1  Conference papers
W. LerchS. PaulJ. NiessFuccio CristianoY. Lamrani et al.  Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions
Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105
hal-01736106v1  Conference papers
S. PaulW. LerchXavier HebrasNikolay CherkashinFuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle
Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩
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hal-01736115v1  Journal articles
Fuccio CristianoXavier HebrasNikolay CherkashinAlain ClaverieW. Lerch et al.  Clusters formation in ultralow-energy high-dose boron-implanted silicon
Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩