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hal-00272556v1  Journal articles
T. BouragbaM. MihailovicH. CarrerePierre DisseixA. Vasson et al.  Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2004, pp.312. ⟨10.1049/ip-opt:20040929⟩
hal-01481853v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJp RedoulesJb Renucci. RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS
Journal of Physics C: Solid State Physics, Institute of Physics (IOP), 1986, 19 (10), pp.1471-1479. ⟨10.1088/0022-3719/19/10/004⟩
hal-01481852v1  Journal articles
Georges LandaRobert CarlesJb RenucciC FontaineEléna Bedel-Pereira et al.  RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2
Journal of Applied Physics, American Institute of Physics, 1986, 60 (3), pp.1025-1031. ⟨10.1063/1.337392⟩
hal-00323461v1  Journal articles
N. BertruM. NouaouraJ. BonnetL. LassabatereEléna Bedel-Pereira et al.  Preparation of GaSb(100) surfaces by ultraviolet irradiation
Journal of Vacuum Science and Technology A, American Vacuum Society, 1997, 15 (4), pp.2043-2050
hal-01481844v1  Journal articles
A MunozyagueGeorges LandaRobert CarlesC FontaineEléna Bedel-Pereira. OPTICAL DETERMINATION OF STRAINS IN HETEROSTRUCTURES - GAAS/SI AS AN EXAMPLE
Journal of Applied Physics, American Institute of Physics, 1989, 66 (1), pp.196-200. ⟨10.1063/1.343904⟩
hal-01481850v1  Journal articles
C FontaineH BenarfaEléna Bedel-PereiraA MunozyagueGeorges Landa et al.  MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES
Journal of Applied Physics, American Institute of Physics, 1986, 60 (1), pp.208-212. ⟨10.1063/1.337683⟩
hal-02051962v1  Journal articles
Eléna Bedel-PereiraRichard MonflierMathieu TheneBernard FrancLudovic Salvagnac et al.  Magnetic Field Effects in X-Ray Damaged NPB and MADN OLEDs
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2019, 55 (2), pp.1-4. ⟨10.1109/TMAG.2018.2856590⟩
hal-01921825v1  Journal articles
Giuseppe FisicaroLourdes PelazMaria AboyPedro LopezMarkus Italia et al.  Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
hal-01721156v1  Conference papers
Fuccio CristianoY. QiuEléna Bedel-PereiraKarim HuetFulvio Mazzamuto et al.  Extended defects in ion-implanted si during nanosecond laser annealing
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
cea-01745394v1  Journal articles
Viktoryia UhnevionakAlexander BurenkovChristian StrengerGuillermo OrtizEléna Bedel-Pereira et al.  Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩
hal-01481851v1  Journal articles
Eléna Bedel-PereiraGeorges LandaRobert CarlesJb RenucciJm Roquais et al.  CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY
Journal of Applied Physics, American Institute of Physics, 1986, 60 (6), pp.1980-1984. ⟨10.1063/1.337199⟩