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hal-00272556v1  Journal articles
T. Bouragba, M. Mihailovic, Hélène Carrère, Pierre Disseix, A. Vasson et al.  Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells
IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2004, 151 (5), pp.312. ⟨10.1049/ip-opt:20040929⟩
hal-01481853v1  Journal articles
Eléna Bedel-Pereira, Georges Landa, Robert Carles, Jp Redoules, Jb Renucci. RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS
Journal of Physics C: Solid State Physics, Institute of Physics (IOP), 1986, 19 (10), pp.1471-1479. ⟨10.1088/0022-3719/19/10/004⟩
hal-01481852v1  Journal articles
Georges Landa, Robert Carles, Jb Renucci, C Fontaine, Eléna Bedel-Pereira et al.  RAMAN CHARACTERIZATION OF TWINNING IN HETEROEPITAXIAL SEMICONDUCTOR LAYERS - GAAS/(CA,SR)F2
Journal of Applied Physics, American Institute of Physics, 1986, 60 (3), pp.1025-1031. ⟨10.1063/1.337392⟩
hal-00323461v1  Journal articles
N. Bertru, M. Nouaoura, J. Bonnet, L. Lassabatere, Eléna Bedel-Pereira et al.  Preparation of GaSb(100) surfaces by ultraviolet irradiation
Journal of Vacuum Science and Technology A, American Vacuum Society, 1997, 15 (4), pp.2043-2050. ⟨10.1116/1.580606⟩
hal-01481844v1  Journal articles
A Munozyague, Georges Landa, Robert Carles, C Fontaine, Eléna Bedel-Pereira. OPTICAL DETERMINATION OF STRAINS IN HETEROSTRUCTURES - GAAS/SI AS AN EXAMPLE
Journal of Applied Physics, American Institute of Physics, 1989, 66 (1), pp.196-200. ⟨10.1063/1.343904⟩
hal-01481850v1  Journal articles
C Fontaine, H Benarfa, Eléna Bedel-Pereira, A Munozyague, Georges Landa et al.  MOLECULAR-BEAM EPITAXY AND OPTICAL CHARACTERIZATION OF GAAS ON CAF2 SUBSTRATES
Journal of Applied Physics, American Institute of Physics, 1986, 60 (1), pp.208-212. ⟨10.1063/1.337683⟩
hal-02051962v1  Journal articles
Eléna Bedel-Pereira, Richard Monflier, Mathieu Thene, Bernard Franc, Ludovic Salvagnac et al.  Magnetic Field Effects in X-Ray Damaged NPB and MADN OLEDs
IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 2019, 55 (2), pp.1-4. ⟨10.1109/TMAG.2018.2856590⟩
hal-01921825v1  Journal articles
Giuseppe Fisicaro, Lourdes Pelaz, Maria Aboy, Pedro Lopez, Markus Italia et al.  Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing
Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩
hal-01721156v1  Conference papers
Fuccio Cristiano, Y. Qiu, Eléna Bedel-Pereira, Karim Huet, Fulvio Mazzamuto et al.  Extended defects in ion-implanted si during nanosecond laser annealing
Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩
cea-01745394v1  Journal articles
Viktoryia Uhnevionak, Alexander Burenkov, Christian Strenger, Guillermo Ortiz, Eléna Bedel-Pereira et al.  Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩
hal-01481851v1  Journal articles
Eléna Bedel-Pereira, Georges Landa, Robert Carles, Jb Renucci, Jm Roquais et al.  CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY
Journal of Applied Physics, American Institute of Physics, 1986, 60 (6), pp.1980-1984. ⟨10.1063/1.337199⟩

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