Skip to Main content Skip to Navigation

Search by documents

inria-00000728v1  Conference papers
Abdelhak AzizKhalil KassmiRabah MaimouniFrançois OliviéGérard Sarrabayrouse et al.  Propriétés électriques des diodes Schottky en Polymères
MajecSTIC 2005 : Manifestation des Jeunes Chercheurs francophones dans les domaines des STIC, IRISA – IETR – LTSI, Nov 2005, Rennes, pp.116-122
hal-03012605v1  Journal articles
Maxime LevillayerSophie DuzellierInès MassiotThierry NunsChristophe Inguimbert et al.  Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, In press, ⟨10.1109/TNS.2021.3068044⟩
hal-02138065v1  Journal articles
Mohamed BenzohraFrançois OliviéMalika BenzohraKaouther KetataMohamed Ketata. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2002, 187 (2), pp.201-206. ⟨10.1016/S0168-583X(01)00928-4⟩
hal-01343977v1  Conference papers
Jean-Guy TartarinSerge KarboyanFrançois OliviéGuilhem AstreLaurent Bary et al.  I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies
European Microwave Integrated Circuits Conference (EuMIC 2011), Oct 2011, Manchester, United Kingdom. pp.438-441
hal-02138197v1  Journal articles
Halima Benchenane-MehorMohamed BenzohraMalika BenzohraFrançois OliviéAbdelkader Saïdane. Simplex Algorithm for Deep-Level Transient Spectroscopy: Simplex-DLTS
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2004, 43 (11A), pp.7376-7380. ⟨10.1143/JJAP.43.7376⟩
hal-02138244v1  Journal articles
Halima Benchenane-MehorMalika IdrissiMohamed BenzohraFrançois Olivié. Reliable Measurements of Defect Profiles in Low-Energy Boron Implanted Silicon
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2004, 43 (11A), pp.7572-7575. ⟨10.1143/JJAP.43.7572⟩