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hal-01719498v1  Conference papers
Victor BoureauDaniel BenoitBénédicte Warot-FonroseMartin HÿtchAlain Claverie. Germanium condensation for co-integration: Strain study by dark-field electron holography
Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown Region. pp.34-36, ⟨10.1109/NMDC.2014.6997415⟩
hal-01719492v1  Conference papers
Rémy BerthelonF. AndrieuP. PerreauE. BaylacA. Pofelski et al.  Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration
Solid-State Device Research Conference (ESSDERC), 2016 46th European, 2016, Unknown, Unknown Region. pp.127-130, ⟨10.1109/ESSDERC.2016.7599604⟩
hal-01719488v1  Conference papers
Rémy BerthelonF. AndrieuS. OrtollandR. NicolasT. Poiroux et al.  Impact of the design layout on threshold voltage in SiGe channel UTBB-FDSOI pMOSFET
Ultimate Integration on Silicon (EUROSOI-ULIS), 2016 Joint International EUROSOI Workshop and International Conference on, 2016, Unknown, Unknown Region. pp.88-91, ⟨10.1109/ULIS.2016.7440059⟩
hal-01736078v1  Journal articles
P. TsouroutasD. TsoukalasA. FlorakisI. ZergiotiA.A. Serafetinides et al.  Laser annealing for n+/p junction formation in germanium
Materials Science in Semiconductor Processing, Elsevier, 2006, 9 (4-5), pp.644--649. ⟨10.1016/j.mssp.2006.08.013⟩
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hal-01736115v1  Journal articles
Fuccio CristianoXavier HebrasNikolay CherkashinAlain ClaverieW. Lerch et al.  Clusters formation in ultralow-energy high-dose boron-implanted silicon
Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩
hal-01736092v1  Conference papers
A.N. LarsenA. KanjilalJ.L. HansenP. GaidukP. Normand et al.  Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing
Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. pp.263-267, ⟨10.1557/PROC-830-D6.2⟩
hal-01736073v1  Journal articles
S. BoninelliNikolay CherkashinAlain ClaverieFuccio Cristiano. Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩
hal-01763638v1  Conference papers
Alain ClaverieVictor BoureauMartin HÿtchNikolay Cherkashin. Strain imaging of processed layers and devices by dark field electron holography
Congress of the Electron Microscopy Society of India, Jul 2014, ??, India
hal-01736057v1  Conference papers
Nikolay CherkashinA. GouyeFlorian HüeFlorent HoudellierMartin Hÿtch et al.  Determination of strain within Si1-yCy layers grown by CVD on a Si substrate
Symposium C – Quantitative Electron Microscopy for Materials Science, 2007, undetermined, France. pp.12-19, ⟨10.1557/PROC-1026-C07-03⟩
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hal-01719499v1  Journal articles
Pablo E. Acosta-AlbaOleg KononchukChristophe GourdelAlain Claverie. Surface self-diffusion of silicon during high temperature annealing
Journal of Applied Physics, American Institute of Physics, 2014, 115 (13), pp.134903 - 333. ⟨10.1063/1.4870476⟩
hal-01763603v1  Conference papers
Alain Claverie. Strain mapping at the nanoscale by dark-field electron holography
International Conference on Functional Oxides and Nanomaterials (ICFONM 2016), Oct 2016, Rajkot, India
hal-01736063v1  Journal articles
P. TsouroutasD. TsoukalasI. ZergiotiNikolay CherkashinAlain Claverie. Diffusion and activation of phosphorus in germanium
Materials Science in Semiconductor Processing, Elsevier, 2008, 11 (5-6), pp.372--377. ⟨10.1016/j.mssp.2008.09.005⟩
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hal-01736097v1  Journal articles
T. MüllerK.-H. HeinigW. MöllerCaroline BonafosH. Coffin et al.  Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology
Applied Physics Letters, American Institute of Physics, 2004, 85 (12), pp.2373-2375
hal-01719500v1  Journal articles
François-Xavier DarrasNikolay CherkashinFuccio CristianoEmmanuel ScheidOleg Kononchuk et al.  Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩
hal-01767810v1  Conference papers
Alain ClaverieVictor BoureauDavid Cooper. Strain mapping of advanced electronic devices by TEM based methods.
International Conference on Microscopy and 39th Annual meeting of EMSI, Jul 2018, Bhubaneswar, India