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hal-02273712v1  Conference papers
Philippe LadouxM. MermetJ. CasarinJoseph Fabre. Outlook for SiC devices in traction converters
ESARS 2012 Electrical Systems for Aircraft, Railway and Ship Propulsion (ESARS), Oct 2012, Bologna, Italy. pp.1-6
hal-02905679v1  Conference papers
Joseph FabrePhilippe LadouxMichel Piton. Opposition Method based test bench for characterization of SiC Dual MOSFET Modules
PCIM2013 (Power Electronics Intelligent Motion Renewable Energy and Energy Management), May 2013, Nuremberg, Germany
hal-02273701v1  Conference papers
Joseph FabrePhilippe Ladoux. Parallel connection of SiC MOSFET modules for future use in traction converters
ESARS 2015 International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles (ESARS), Mar 2015, Aachen, Germany. pp.1-6, ⟨10.1109/ESARS.2015.7101514⟩
hal-02905688v1  Conference papers
Joseph FabrePhilippe LadouxMichel Piton. Characterization of SiC MOSFET dual modules for future use in railway traction chains
PCIM2012 (Power Electronics Intelligent Motion Renewable Energy and Energy Management), May 2012, Nuremberg, Germany
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tel-00010475v1  Habilitation à diriger des recherches
Frédéric Morancho. De nouvelles limites pour le compromis "résistance passante spécifique/tenue en tension" des composants unipolaires de puissance
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2004
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tel-00807836v1  Theses
Yann Weber. Conception d'une nouvelle génération de transistor FLYMOS vertical de puissance dépassant la limite conventionnelle du silicium
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2008. Français
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hal-01005966v1  Journal articles
Moustafa ZerarkaPatrick AustinFrédéric MoranchoKarine IsoirdHoussam Arbess et al.  Analysis Study of Sensitive Volume and Triggering Criteria of SEB in Super-Junction MOSFETs
IET Circuits, Devices & Systems, Institution of Engineering and Technology, 2014, 8 (3), pp.197-204
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hal-00669506v1  Journal articles
Raul Fernandez-GarciaIgnacio GilAlexandre BoyerSonia Ben DhiaBertrand Vrignon. A New Approach to Modeling the Impact of EMI on MOSFET DC Behavior
IEICE Transactions on Electronics, Institute of Electronics, Information and Communication Engineers, 2011, E94-C (12), pp.1906
hal-02273699v1  Journal articles
Joseph FabrePhilippe Ladoux. Parallel Connection of 1200 V/100 A SiC MOSFET Half-bridge Modules
IEEE Transactions on Industry Applications, Institute of Electrical and Electronics Engineers, 2015, IEEE Transactions on Industry Applications ( Volume: 52 Issue: 2 March-April 2016 ), 52 (2), pp.1669 - 1676. ⟨10.1109/TIA.2015.2496109⟩
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hal-02377367v1  Conference papers
Cédric MasanteJulien PernotJuliette LetellierDavid EonNicolas Rouger. 175V, > 5.4 MV/cm, 50 m(omega).cm2 at 250°C Diamond MOSFET and its reverse conduction
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), May 2019, Shanghai, China. pp.151-154, ⟨10.1109/ISPSD.2019.8757645⟩
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tel-00377784v1  Theses
Loïc Théolier. Conception de transistor MOS haute tension (1200 volts) pour l'électronique de puissance
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2008. Français
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hal-01005688v1  Conference papers
Moustafa ZerarkaPatrick AustinFrédéric MoranchoKarine IsoirdHoussam Arbess et al.  Analysis study of sensitive volume and triggering criteria of SEB in super-junction MOSFETs
International Seminar on Power Semiconductors (ISPS 2012), Aug 2012, Pragues, Czech Republic. 6 p
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hal-01002232v1  Conference papers
Loïc ThéolierFrédéric MoranchoKarine IsoirdHicham Mahfoz-KotbHenri Tranduc. The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications
2nd International Conference on Automotive Power Electronics (APE 2007), Sep 2007, PARIS, France. 8 p
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hal-01005674v1  Conference papers
Loïc ThéolierKarine IsoirdHenri TranducFrédéric MoranchoJaume Roig Guitart et al.  Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs
8th International Seminar on Power Semiconductors (ISPS'06, Aug 2006, Pragues, Czech Republic. pp.117-122
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hal-02334405v1  Conference papers
François BoigeAsad FayyazAlberto CastellazziFrédéric RichardeauSébastien Vinnac. Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy
European Power Elecrtonics and Applications 2019 - IEEE ECCE Europe, Sep 2019, Gênes, Italy
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hal-01871397v1  Conference papers
Ahmet LaleAuriane GrappinDavid BourrierLaurent MazenqAurélie Lecestre et al.  Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors
19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2017), Jun 2017, Kaohsiung, Taiwan. 4p., ⟨10.1109/TRANSDUCERS.2017.7994346⟩
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tel-00004312v1  Theses
Fabien Prégaldiny. Etude et modélisation du comportement électrique des transistors MOS fortement submicroniques
Micro et nanotechnologies/Microélectronique. Université Louis Pasteur - Strasbourg I, 2003. Français
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tel-00165581v1  Theses
Frédéric Morancho. Le transistor MOS de puissance à tranchées : modélisation et limites de performances
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 1996. Français