Millimeter-wave UWB architecture for wireless sensor networks
Résumé
Exploiting wireless communications has had an unstoppable growth in the last years. In this attracting scenario, the Ultra Wide Band (UWB) market represents one of the main interesting targets for semiconductor industry. The availability of newer and larger bandwidth in the frequency spectrum (60 GHz and 77 GHz) opens to the possibility of higher bitrates communications. The technology cost reduction is made possible by the use of silicon as semiconductor substrate in the place of classical heterojunction materials. The rapid reduction of the technological node (seen as the thinning of the gate channel) in the new generation of CMOS transistors allows obtaining faster transistors that become usable on V band applications. Therefore, the digital origin of the technology yields two additional advantages. First of all, the facilities for the circuits' production already exist as well as the recipe to create the devices on the substrate. The only additive cost remains the characterization of the technology at mm-wave frequencies. The second fundamental advantage is the possibility to have a complete integration of the system in the same dies with a substantial reduction of packaging and interconnection costs. The objectives of this thesis is the design and the modeling of a complete 60 GHz UWB transceiver starting from the characterization and the optimization of the single subcomponents. The main feature that constitutes the principal constraint of the entire work of this thesis is the high efficiency required for the transceiver front - end. The energy safe capability, in fact, represents the strength point of this project, being the system conceived for wireless sensors network applications. Passive components as inductors and RF lines, have been the first elements that have been designed and characterized. Then the structure of CMOS transistor have been analyzed and characterized in order to obtain performances as higher as possible, in particular for wide transistors. The knowledge acquired during this first part has allowed the developed of high quality factor inductors and high performance transistors (used in the design of upconversion mixer). In addition, the optimum correspondence between simulations and measurements combined with the gained experience on the RF electromagnetic simulations have been exploited to create a series of innovative (when possible) passive structures as baluns, power splitters and power couplers. The second significant part of this work has been consecrated to the modeling of a series of high performance active circuits in the transmitter and the receiver blocks (upconversion mixer, voltage controlled oscillator ad a series of differential and single-ended buffers). The behavior of these structures has been accurately investigated and optimized in order to be later efficiently integrated in the complete transceiver system. The systems are finally integrated in two different dies, transmitter and receiver blocks, and the 60 GHz link has been yield by a demostrator set-up.