Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment

F. Ravotti (1) , M. Glaser , Frédéric Saigné (1) , L. Dusseau (1) , Gérard Sarrabayrouse (2)

1 CEM2 - Centre d'Electronique et de Micro-optoélectronique de Montpellier
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes

Domaines: Electronique

F. Ravotti, M. Glaser, Frédéric Saigné, L. Dusseau, Gérard Sarrabayrouse. Prediction of the thermal annealing of thick oxide metal-oxide-semiconductor dosimeters irradiated in a harsh radiation environment. Applied Physics Letters, 2006, 89 (8), pp.083503.1-083503.3. ⟨10.1063/1.2337084⟩. ⟨hal-00328198⟩