STM and DFT Investigations of Isolated Porphyrin on a Silicon-Based Semiconductor at Room Temperature

Mohamed El Garah (1) , Younes Makoudi (1) , Frank Palmino (1) , Eric Duverger (1) , Philippe Sonnet (2) , Laurent Chaput (2) , André Gourdon (3) , Frederic Cherioux (1)

1 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)
2 LPSE - Laboratoire de physique et de spectroscopie électronique
3 CEMES - Centre d'élaboration de matériaux et d'études structurales

Individual adsorbed Cu-5,10,15,20-tetrakis(3,5-di-tert-butylphenyl) porphyrin is observed by STM on a Si(111)-B surface with an atomic resolution at room temperature. The conformational modifications after the adsorption on the surface is successfully interpreted thanks to DFT calculations performed on the entire system (molecule and substrate).

Domaines: Chimie organique; Chimie-Physique [physics.chem-ph]

Mohamed El Garah, Younes Makoudi, Frank Palmino, Eric Duverger, Philippe Sonnet, et al.. STM and DFT Investigations of Isolated Porphyrin on a Silicon-Based Semiconductor at Room Temperature. Physical Chemistry Chemical Physics, 2009, 10, pp.3190-3193. ⟨10.1002/cphc.200900523⟩. ⟨hal-00441382⟩