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Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications

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https://hal.archives-ouvertes.fr/hal-00463965
Contributor : Marie-Anne Jung <>
Submitted on : Monday, March 15, 2010 - 3:34:49 PM
Last modification on : Friday, January 10, 2020 - 9:08:10 PM

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  • HAL Id : hal-00463965, version 1

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Pierre-Eugène Coulon, B.S. Sahu, Marzia Carrada, Sylvie Schamm-Chardon, Gérard Benassayag, et al.. Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications. 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009), Sep 2009, ATHENES, Greece. ⟨hal-00463965⟩

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