Solution layer deposition: A technique for the growth of ultra-pure manganese oxides on silica at room temperature

Abstract : With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high-purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid-state 29Si MAS NMR, XPS, SIMS, and HRTEM.
Document type :
Journal articles
Complete list of metadatas

Cited literature [13 references]  Display  Hide  Download

https://hal.archives-ouvertes.fr/hal-01565099
Contributor : Open Archive Toulouse Archive Ouverte (oatao) <>
Submitted on : Wednesday, July 19, 2017 - 2:43:58 PM
Last modification on : Friday, January 10, 2020 - 9:09:28 PM

File

Cure_16709.pdf
Files produced by the author(s)

Identifiers

Citation

Jérémy Cure, Kilian Piettre, Yannick Coppel, Eric Beche, Jérôme Esvan, et al.. Solution layer deposition: A technique for the growth of ultra-pure manganese oxides on silica at room temperature. Angewandte Chemie International Edition, Wiley-VCH Verlag, 2016, 55 (9), pp.3027-3030. ⟨10.1002/anie.201509715⟩. ⟨hal-01565099⟩

Share

Metrics

Record views

188

Files downloads

161