MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs

Nikolay Cherkashin (1) , Martin Hÿtch (2) , Maxim Korytov (3) , Daniele Barettin (4) , A. V. Sakharov , A.E. Nikolaev (5) , A..F Tsatsulnikov

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
2 CEMES-I3EM - Interférométrie, In situ et Instrumentation pour la Microscopie Electronique
3 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
4 Department of Electronics Engineering,
5 A.F. Ioffe Physical-Technical Institute

Domaines: Physique [physics]

Nikolay Cherkashin, Martin Hÿtch, Maxim Korytov, Daniele Barettin, A. V. Sakharov, et al.. MOCVD Grown InGaN/GaN Three-Dimensional Islands: Growth Approaches, Strain-Composition Characterization, Exploitation for LEDs. Energy Materials Nanotechnology (EMN), May 2016, Dubrovnik, Croatia. ⟨hal-01763074⟩