Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameters

Gael Lafleur 1 Guilhem Almuneau 1 Alexandre Arnoult 2 Henri Camon 1 Stéphane Calvez 1
1 LAAS-PHOTO - Équipe Photonique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : The crystallographic anisotropy of the lateral selective thermal oxidation of AlGaAs alloys is experimentally studied. The anisotropic behavior of this oxidation process, used primarily for building a lateral confinement in vertical surface emitting lasers (VCSEL), is quantified by varying different process parameters and the geometrical shapes of laterally oxidized mesa structures. This experimental study aims to have a better control of the oxide aperture shape used in oxide-confined photonics devices.
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Gael Lafleur, Guilhem Almuneau, Alexandre Arnoult, Henri Camon, Stéphane Calvez. Anisotropy in the wet thermal oxidation of AlGaAs: influence of process parameters. Optical Materials Express, OSA pub, 2018, 8 (7), pp.394 - 396. ⟨10.1364/OME.8.001788⟩. ⟨hal-01810561⟩

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