Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Simone Mazzucato (1) , Poonyasiri Boonpeng (2) , Hélène Carrère (1) , David Lagarde (1) , Alexandre Arnoult (3) , Guy Lacoste (3) , Tiantian Zhang (1) , Andrea Balocchi (1) , Thierry Amand (1) , Xavier Marie (1) , Chantal Fontaine (2)

1 LPCNO - Laboratoire de physique et chimie des nano-objets
2 LAAS-PHOTO - Équipe Photonique
3 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique

Time-resolved photoluminescence was performed on as-grown and annealed bulk GaAsBi samples. Rapid thermal annealing was carried out at a temperature of 750 °C. With annealing, we observed a significant change in the photoluminescence decay time at low temperature and low excitation power, which is likely due to a reduction of localized states. Although the time-integrated photoluminescence intensity did not show a large variation, this enhancement was confirmed by the observed removal after annealing of the S-shape behaviour present in the as-grown sample.

Domaines: Chimie

Simone Mazzucato, Poonyasiri Boonpeng, Hélène Carrère, David Lagarde, Alexandre Arnoult, et al.. Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence. Semiconductor Science and Technology, 2013, 28 (2), pp.022001. ⟨10.1088/0268-1242/28/2/022001⟩. ⟨hal-02050522⟩