Abstract : Anodic bonding and anisotropic etching have been used to fabricate silicon / Pyrex capacitive pressure sensors. Their thermal behaviour has been evaluated by 3D finite element structural analysis and measured from-30ºC to 180ºC. Experimental and modelling results have revealed that the thermal coefficient is a strong function of dimensions. In order to minimise the thermal drift due to thermo-mechanical deformations it has been shown that the ratio of the chip and internal cavity widths should be approximately equal to 3/2. Based on this exemplary case, it has been inferred that the best metrological characteristics can be reached by effecting an in-depth structural analysis taking into account not only the active parts of micro devices but also their passive parts.
https://hal.laas.fr/hal-02170328
Contributor : Philippe Menini <>
Submitted on : Monday, July 1, 2019 - 6:31:12 PM Last modification on : Friday, January 10, 2020 - 9:10:15 PM
G Blasquez, X Chauffleur, Patrick Pons, C Douziech, P Favaro, et al.. Thermal Drift and Chip Size in Capacitive Pressure Sensors. Eurosensors XIII, Sep 1999, La Haye, Netherlands. pp.461-464. ⟨hal-02170328⟩