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Communication Dans Un Congrès Année : 2006

Phase noise in SiGe HBT amplifiers and applications

Résumé

Amplifier residual phase noise, as a tool to study nonlinear noise in transistors : 1) Measurement technique, 2) Specificity of the characterization of SiGe devices, 3)Residual phase noise modelling of SiGe transistors. Application to the design of a two stages low phase noise SiGe amplifier. Application to the phase noise characterization and modelling of new types of microwave frequency stabilization devices : FBAR resonators and optical resonators.
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Dates et versions

hal-02330898 , version 1 (24-10-2019)

Identifiants

  • HAL Id : hal-02330898 , version 1

Citer

Olivier Llopis, Sébastien Gribaldo. Phase noise in SiGe HBT amplifiers and applications: Invited talk at IMS workshop (slides only). IMS workshop "noise in SiGe and GaAs HBTs" - IEEE International Microwave conference 2006, Jun 2006, San Francisco, United States. ⟨hal-02330898⟩
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