Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies

Timothé Rossignol (1, 2, 3, 4) , Frédéric Richardeau (5, 3) , Marc Cousineau (5) , Jean-Marc Blaquière (5, 2, 3) , Rene Escoffier (6)

1 LAPLACE - LAboratoire PLasma et Conversion d'Energie
2 CNRS - Centre National de la Recherche Scientifique
3 UT - Université de Toulouse
4 Renault Research Department
5 LAPLACE-CS - Convertisseurs Statiques
6 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

In this paper, the authors present a behavioral model of a GaN normally ON HEMT. Forward and reverse conductions are modelized. The modelling of both conduction modes is required to provide accurate diode-less synchronous switching-cell simulation. A dedicated transistor capacitance extraction procedure based on an analysis of turn-on and turn-off waveforms is also proposed and experimented.

Mots clés: Behavioral model; GaN; Voltage inverter; Wide band gap devices

Domaines: Energie électrique

Timothé Rossignol, Frédéric Richardeau, Marc Cousineau, Jean-Marc Blaquière, Rene Escoffier. Behavioral model of gallium nitride normally ON power HEMT dedicated to inverter simulation and test of driving strategies. 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), Sep 2015, Geneva, Switzerland. pp.1-11, ⟨10.1109/EPE.2015.7309208⟩. ⟨hal-02920266⟩