New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies Luis-Miguel Procel Instituto de Micro/Nanoelectrónica

Adriana Arevalo (1) , Romain Liautard (2) , Daniel Romero , Lionel Trojman (3) , Luis-Miguel Procel

1 IMNE - instituto de Micro y Nanoelectronica
2 UT3 - Université Toulouse III - Paul Sabatier
3 LISITE - Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication

The purpose of this work is to point out the main differences between a Static Random-Access Memory (SRAM) cells implemented by using Tunnel FET (TFET) and FinFET technologies. We have compared the behavior of SRAM cells implemented in both technologies cells for a supply voltage range from 0.4V to 1.2V. Furthermore, for our study, we have chosen different SRAM cell topologies, such as 6T, 8T, 9T and 10T. Therefore, we have simulated all of these topologies for both technologies and extracted the Static Noise Margins (SNM) for the reading and writing processes. In addition, we have determined the power consumption in order to find the best trade-off between stability and power. By analyzing these results, we have determined the best topology for each technology. Finally, we have compared these best topologies for each technology in order to perform a study of advantages and shortcomings. Our results show more advantages using TFET technology instead of FinFET one.

Mots clés: SRAM memory; FinFET; Tunnel-FET; Static Noise Margins; Stability Analysis; Low Voltage

Domaines: Micro et nanotechnologies/Microélectronique

Adriana Arevalo, Romain Liautard, Daniel Romero, Lionel Trojman, Luis-Miguel Procel. New Insight for next Generation SRAM: Tunnel FET versus FinFET for Different Topologies Luis-Miguel Procel Instituto de Micro/Nanoelectrónica. SBCCI, Aug 2019, Sao Paolo, Brazil. pp.85-88, ⟨10.1145/3338852.3339871⟩. ⟨hal-02951701⟩