Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors

Ahmet Lale 1 Auriane Grappin 1 David Bourrier 2 Laurent Mazenq 2 Aurélie Lecestre 2 Jérôme Launay 1 Pierre Temple-Boyer 1
1 LAAS-MICA - Équipe MICrosystèmes d'Analyse
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and "low cost" standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.
Keywords : microfluidics gate all-around pH measurement ChemFET finFET MOSFET ISFET silicon nanowire biosensor potentiometric sensor nanosensor microsensor
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Conference papers
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LAAS | CNRS | LAAS-TEAM | INSA-TOULOUSE | LAAS-MICA | LAAS-MICRO-NANO-BIO-TECHNOLOGIES | INSA-GROUPE | UNIV-TLSE3 | UT1-CAPITOLE | UNIV-TLSE2

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Ahmet Lale, Auriane Grappin, David Bourrier, Laurent Mazenq, Aurélie Lecestre, et al.. Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors. 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2017), Jun 2017, Kaohsiung, Taiwan. 4p., ⟨10.1109/TRANSDUCERS.2017.7994346⟩. ⟨hal-01871397⟩

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