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Conference papers
Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors
Abstract : We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and "low cost" standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.
Cited literature [14 references]
https://hal.laas.fr/hal-01871397
Contributor : Pierre Temple-Boyer <>
Submitted on : Monday, September 10, 2018 - 5:14:27 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM
Long-term archiving on: : Tuesday, December 11, 2018 - 4:43:00 PM
Contributor : Pierre Temple-Boyer <>
Submitted on : Monday, September 10, 2018 - 5:14:27 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM
Long-term archiving on: : Tuesday, December 11, 2018 - 4:43:00 PM
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