Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors

Abstract : We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and "low cost" standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.
Complete list of metadatas

Cited literature [14 references]  Display  Hide  Download

https://hal.laas.fr/hal-01871397
Contributor : Pierre Temple-Boyer <>
Submitted on : Monday, September 10, 2018 - 5:14:27 PM
Last modification on : Saturday, October 26, 2019 - 1:35:44 AM
Long-term archiving on: Tuesday, December 11, 2018 - 4:43:00 PM

File

Extended_paper_Transducers2017...
Files produced by the author(s)

Identifiers

Citation

Ahmet Lale, Auriane Grappin, David Bourrier, Laurent Mazenq, Aurélie Lecestre, et al.. Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors. 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2017), Jun 2017, Kaohsiung, Taiwan. 4p., ⟨10.1109/TRANSDUCERS.2017.7994346⟩. ⟨hal-01871397⟩

Share

Metrics

Record views

50

Files downloads

52