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Journal articles
Ion beam induced defects in crystalline silicon
Fuccio Cristiano
1
Nikolay Cherkashin
1
Xavier Hebras
1
P. Calvo
1
Y. Lamrani
1
E. Scheid
1
B. de Mauduit
1
B. Colombeau
2
W. Lerch
S. Paul
Alain Claverie
3
3
CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
CEMES - Centre d'élaboration de matériaux et d'études structurales
Fuccio Cristiano 1
Author Employer institution : Équipe Matériaux et Procédés pour la Nanoélectronique IdHAL : fuccio-cristiano
Nikolay Cherkashin 1
Author IdHAL : nikolay-cherkashin ORCID : https://orcid.org/0000-0002-0322-0864
Xavier Hebras 1
Author
P. Calvo 1
Author
W. Lerch
Author
S. Paul
Author
Alain Claverie 3
Author IdHAL : alain-claverie ORCID : https://orcid.org/0000-0003-2211-4618
1
CEMES - Centre d'élaboration de matériaux et d'études structurales (29 Rue Jeanne Marvig - BP 94347 31055 TOULOUSE CEDEX 4
- France)
- INSA Toulouse - Institut National des Sciences Appliquées - Toulouse (135, avenue de Rangueil - 31077 Toulouse cedex 4 - France)
- ICT-FR 2599 - Institut de Chimie de Toulouse (118 Route de Narbonne 31062 Toulouse cédex 9 - France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- IRD - Institut de Recherche pour le Développement (Siège Le Sextant 44, bd de Dunkerque CS 90009 13572 Marseille cedex 02 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : FR2599 (France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : UPR8011 (France)
2
UNIS - University of Surrey (University of Surrey, Guildford Surrey GU2 7XH - United Kingdom)
3
CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES 29 rue Jeanne Marvig, BP 94347, F-31055 Toulouse Cedex 4 - France)
- CEMES - Centre d'élaboration de matériaux et d'études structurales (29 Rue Jeanne Marvig - BP 94347 31055 TOULOUSE CEDEX 4
- France)
- INSA Toulouse - Institut National des Sciences Appliquées - Toulouse (135, avenue de Rangueil - 31077 Toulouse cedex 4 - France)
- ICT-FR 2599 - Institut de Chimie de Toulouse (118 Route de Narbonne 31062 Toulouse cédex 9 - France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- IRD - Institut de Recherche pour le Développement (Siège Le Sextant 44, bd de Dunkerque CS 90009 13572 Marseille cedex 02 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : FR2599 (France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : UPR8011 (France)
Abstract : A short review of the current understanding and modelling of the formation of ion beam induced defects in crystalline silicon is given in the first part of this article. Some recent experiments on the evolution of {1 1 3} defects formed after Si+ implants in CVD grown wafers and on the formation of small clusters in ultra-low energy high-dose B implanted Si are then presented. It is found that, independently of the experimental conditions, {1 1 3} defects evolve in all cases following a non-conservative Ostwald Ripening mechanism. In some cases, {1 1 3} defects have been found to transform into dislocation loops, while in other cases they completely dissolve during annealing. After RTA annealing of ultra-low energy high-dose B+ implanted Si, small two-dimensional {1 0 0} loops are formed. Both Si and B atoms are contained in the defects. These results indicate that boron interstitial clusters can be imaged by TEM and thus can be much bigger than generally assumed.
Document type :
Journal articles
Domain :
Complete list of metadatas
https://hal.archives-ouvertes.fr/hal-01736101
Contributor : Nikolay Cherkashin <>
Submitted on : Friday, March 16, 2018 - 4:08:20 PM
Last modification on : Friday, January 10, 2020 - 9:10:21 PM
Contributor : Nikolay Cherkashin <>
Submitted on : Friday, March 16, 2018 - 4:08:20 PM
Last modification on : Friday, January 10, 2020 - 9:10:21 PM
Identifiers
- HAL Id : hal-01736101, version 1
- DOI : 10.1016/j.nimb.2003.11.019
Collections
CNRS | CEMES | MEM | INSA-TOULOUSE | INSA-GROUPE | UNIV-TLSE3 | INC-CNRS
Citation
Fuccio Cristiano, Nikolay Cherkashin, Xavier Hebras, P. Calvo, Y. Lamrani, et al.. Ion beam induced defects in crystalline silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩. ⟨hal-01736101⟩
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